公开(公告)号：US20030067009A1

公开(公告)日：2003-04-10

申请号：US10281421

申请日：2002-10-25

Applicant: Xerox Corporation

Inventor： Christopher L. Chua ,  Philip D. Floyd ,  Thomas L. Paoli ,  Decai Sun

IPC: H01L027/15

CPC classification number: H01S5/0261 ,  H01S5/18313 ,  H01S5/1833 ,  H01S5/18388

Abstract: Semiconductor devices in an optoelectronic integrated circuit are electrically isolated from each other by using planar lateral oxidation to oxidize a buried semiconductor layer vertically separating the semiconductor devices.

Abstract translation: 光电子集成电路中的半导体器件通过使用平面横向氧化来彼此电绝缘以氧化垂直分离半导体器件的掩埋半导体层。