公开(公告)号：US12046873B2

公开(公告)日：2024-07-23

申请号：US17090762

申请日：2020-11-05

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Constance J. Chang-Hasnain ,  Kevin T. Cook

IPC: H01S5/183 ,  H01S5/068 ,  H01S5/34

CPC classification number: H01S5/18363 ,  H01S5/068 ,  H01S5/18313 ,  H01S5/34

Abstract: A widely tunable vertical-cavity surface-emitting laser (VCSEL) having a semiconductor cavity followed by an air-gap over which is a movable reflector. Lasing wavelength is controlled by a combination of the resonance of the semiconductor cavity, which is fixed, and the resonance of the air cavity, which can be changed by moving the reflector. Tuning range and slope of the VCSEL are increased by configuring the semiconductor cavity to be antiresonant at the center of the tuning range, which forces electromagnetic energy to be confined more strongly in the air gap than in the semiconductor, thus making emission wavelength more sensitive to the displacement of the tuning mirror.

公开(公告)号：US20240162687A1

公开(公告)日：2024-05-16

申请号：US18281786

申请日：2021-08-10

Applicant: VERTILITE CO., LTD.

Inventor： Weicheng WENG ,  Cheng ZHANG ,  Song LIU ,  Dong LIANG

IPC: H01S5/42 ,  H01S5/042 ,  H01S5/183

CPC classification number: H01S5/423 ,  H01S5/0421 ,  H01S5/18313

Abstract: Provided VCSEL including substrate, emitters arranged in m×n array, and first ohmic metal layer. Surface of substrate includes light-emitting regions in array of m rows and n columns and non-light-emitting region surrounding each light-emitting region, m×n≥2. Each emitter includes first DBR on surface of substrate, active layer on side of first DBR away from substrate, and second DBR on side of active layer away from substrate, at least part of first DBR disposed in respective light-emitting region, active layer and second DBR disposed in respective light-emitting region. First ohmic metal layer disposed on surface of first DBR away from substrate and disposed in non-light-emitting region, projection of first ohmic metal layer on substrate doesn't overlap projections of first and second connecting lines on substrate, first and second connecting lines respectively connects centers of emitters in same row, connects centers of emitters in same column.

公开(公告)号：US11916355B2

公开(公告)日：2024-02-27

申请号：US16957856

申请日：2018-12-26

Applicant: Princeton Optronics, Inc.

Inventor： Jean-Francois Seurin ,  Robert Van Leeuwen ,  Chuni Ghosh

IPC: H01S5/183

CPC classification number: H01S5/18369 ,  H01S5/18313 ,  H01S5/18377 ,  H01S2301/163

Abstract: Narrow beam divergence semiconductor sources are operable to generate a beam having a substantially narrow beam divergence, an emission wavelength, and a substantially uniform beam intensity. The presence of an extended length mirror can help suppress one or more longitudinal and/or transverse modes such that the beam divergence and/or the spectral width of emission is substantially reduced.

公开(公告)号：US11876348B2

公开(公告)日：2024-01-16

申请号：US17032673

申请日：2020-09-25

Applicant: Apple Inc.

Inventor： Mariam Sadaka ,  Date J. Noorlag

IPC: H01S5/183 ,  H01S5/42 ,  H01S5/40 ,  H01S5/22

CPC classification number: H01S5/18313 ,  H01S5/18327 ,  H01S5/18344 ,  H01S5/2205 ,  H01S5/4025 ,  H01S5/423 ,  H01S2301/176

Abstract: Trenched VCSEL emitter structures are described. In an embodiment, an emitter structure includes a cluster of non-uniformly distributed emitters in which each emitter includes an inside mesa trench and an oxidized portion of an oxide aperture layer extending from the inside mesa trench. An outside moat trench is located adjacent the inside mesa trench and is formed to a depth past the oxide aperture layer.

公开(公告)号：US11870217B2

公开(公告)日：2024-01-09

申请号：US17453057

申请日：2021-11-01

Applicant: Lumentum Operations LLC

Inventor： Benjamin Kesler

IPC: H01S5/00 ,  H01S5/183 ,  H01S5/34 ,  H01S5/42 ,  H01S5/30 ,  H01S5/20

CPC classification number: H01S5/18397 ,  H01S5/18305 ,  H01S5/18313 ,  H01S5/18388 ,  H01S5/2081 ,  H01S5/3095 ,  H01S5/3416 ,  H01S5/426 ,  H01S5/183 ,  H01S5/18394

Abstract: In some implementations, a vertical cavity surface emitting laser (VCSEL) device includes a substrate layer and a first set of epitaxial layers for a bottom-emitting VCSEL disposed on the substrate layer. The first set of epitaxial layers may include a first set of mirrors and at least one first active layer. The VCSEL device may include a second set of epitaxial layers for a top-emitting VCSEL disposed on the first set of epitaxial layers for the bottom-emitting VCSEL. The second set of epitaxial layers may include a second set of mirrors and at least one second active layer. The top-emitting VCSEL and the bottom-emitting VCSEL may be configured to emit light in opposite light emission directions.

公开(公告)号：US10014661B2

公开(公告)日：2018-07-03

申请号：US14804367

申请日：2015-07-21

Applicant: Vixar Inc.

Inventor： Mary K. Brenner ,  Klein L. Johnson ,  Matthew M. Dummer

IPC: H01S5/183 ,  H01S5/187 ,  H01S5/343 ,  H01S5/20

CPC classification number: H01S5/1833 ,  H01S5/18305 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/18313 ,  H01S5/18327 ,  H01S5/18333 ,  H01S5/18336 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/18394 ,  H01S5/187 ,  H01S5/2063 ,  H01S5/34326 ,  H01S2301/166

Abstract: VCSELs and methods having improved characteristics. In some embodiments, these include a semiconductor substrate; a vertical-cavity surface-emitting laser (VCSEL) on the substrate; a first electrical contact formed on the VCSEL; a second electrical contact formed on the substrate, wherein the VCSEL includes: a first resonating cavity having first and second mirrors, at least one of which partially transmits light incident on that mirror, wherein the first second mirrors are electrically conductive. A first layer is between the first mirror and the second mirror and has a first aperture that restricts the path of current flow. A second layer is between the first layer and the second mirror and also restricts the electrical current path. A multiple-quantum-well (MQW) structure is between the first mirror and the second mirror, wherein the first and second apertures act together to define a path geometry of the current through the MQW structure.

公开(公告)号：US09929536B1

公开(公告)日：2018-03-27

申请号：US15624489

申请日：2017-06-15

Applicant: TrueLight Corporation

Inventor： Bing-Cheng Lin ,  Chih Cheng Chen ,  Hung-Wei Tseng

IPC: H01S5/183 ,  H01S5/187 ,  H01S5/22 ,  H01S5/042

CPC classification number: H01S5/18344 ,  H01S5/0425 ,  H01S5/18313 ,  H01S5/18333 ,  H01S5/2063

Abstract: A vertical-cavity surface-emitting Laser (VCSEL) has a three-trench structure. By forming a first trench within a mesa around the periphery of an output window of the VCSEL, the overall capacitance is decreased and the time used in the oxidation process for an oxidation layer is shortened. By forming a second trench and a third trench on the periphery of the mesa in a step-like concave manner, the mesa becomes a step-like structure having double mesa-layers. Such that, a larger heat-radiating area can be obtained for decreasing thermal effects, while the metal-gap defects of the metal layer can also be avoided. The implant layer is formed around the periphery of the output window for controlling the optical mode and confining the current path. In addition, an output layer is formed on the output window for controlling the output light.

公开(公告)号：US20180019574A1

公开(公告)日：2018-01-18

申请号：US15496641

申请日：2017-04-25

Applicant: FUJI XEROX CO., LTD.

Inventor： Naoki JOGAN ,  Jun SAKURAI ,  Akemi MURAKAMI ,  Takashi KONDO ,  Junichiro HAYAKAWA

IPC: H01S5/22 ,  H01S5/183

CPC classification number: H01S5/2214 ,  H01S5/0264 ,  H01S5/0282 ,  H01S5/183 ,  H01S5/18313 ,  H01S5/1835 ,  H01S5/2063

Abstract: A light emitting device includes: a first mesa structure including a light emitting part; a second mesa structure that is connected to the first mesa structure by a common semiconductor layer and that includes a light receiving part that receives light propagating in a lateral direction through the semiconductor layer from the light emitting part; a detector that detects an amount of the light received by the light receiving part; and an oxide confinement layer that is formed over the first mesa structure and the second mesa structure and that includes an oxidized region and a non-oxidized region.

公开(公告)号：US09812843B2

公开(公告)日：2017-11-07

申请号：US15205152

申请日：2016-07-08

Applicant: FUJI XEROX CO., LTD.

Inventor： Masaya Kumei

IPC: H01S5/183 ,  H01S5/343 ,  H01S5/042 ,  H01S5/00 ,  H01S5/20

CPC classification number: H01S5/18313 ,  H01S5/0021 ,  H01S5/0425 ,  H01S5/2068 ,  H01S5/3432 ,  H01S2301/176

Abstract: A method for producing a light-emitting device includes oxidizing a current confinement layer containing Al by steam oxidation from a side face of a light-emitting element portion including the current confinement layer to form a current confinement structure in the light-emitting element portion; heating the light-emitting element portion to about 150° C. or higher and about 400° C. or lower at reduced pressure for a predetermined heating time while the oxidized current confinement layer is exposed at the side face; and after the light-emitting element portion is heated, forming a protective film on the side face.

公开(公告)号：US09748739B2

公开(公告)日：2017-08-29

申请号：US15093990

申请日：2016-04-08

Applicant: Seiko Epson Corporation

Inventor： Tsuyoshi Kaneko ,  Tetsuo Nishida ,  Yuji Kurachi

IPC: H01S5/00 ,  H01S5/183 ,  H03L7/26 ,  H01S5/22 ,  G04F5/14 ,  H01S5/187 ,  H01S5/343 ,  H01S5/042

CPC classification number: H01S5/18333 ,  G04F5/145 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18313 ,  H01S5/18344 ,  H01S5/1835 ,  H01S5/18352 ,  H01S5/18361 ,  H01S5/187 ,  H01S5/2213 ,  H01S5/34313 ,  H03L7/26

Abstract: A vertical cavity surface emitting laser includes: a substrate; a first mirror layer; an active layer; a second mirror layer; a current constriction layer; a first area connected to the first mirror layer and including a plurality of oxide layers; and a second area connected to the second mirror layer and including a plurality of oxide layers. The first mirror layer, the active layer, the second mirror layer, the current constriction layer, the first area, and the second area configure a laminated body. The laminated body includes a first portion, a second portion, and a third portion between the first portion and the second portion. When a width of the oxide area is W1 and a width of an upper surface of the first portion is W2, W2/W1≦3.3.