公开(公告)号：US20100117041A1

公开(公告)日：2010-05-13

申请号：US12344443

申请日：2008-12-26

Applicant: Yun-Taek HWANG ,  Yu-Jin LEE

Inventor： Yun-Taek HWANG ,  Yu-Jin LEE

IPC: H01L47/00 ,  H01L21/00

CPC classification number: H01L27/24 ,  Y10S438/903 ,  Y10S977/762 ,  Y10S977/843 ,  Y10S977/943

Abstract: A resistive memory device includes a first conductive line on a substrate, a vertical selection diode comprising a nanowire or a nanotube and being arranged over the first conductive line, a resistive element including a resistive layer arranged over the vertical selection diode; and a second conductive line arranged over the resistive element.

Abstract translation: 电阻式存储器件包括衬底上的第一导电线，包括纳米线或纳米管并且布置在第一导线上的垂直选择二极管，包括布置在垂直选择二极管上的电阻层的电阻元件; 以及布置在所述电阻元件上的第二导线。