公开(公告)号：US20140038193A1

公开(公告)日：2014-02-06

申请号：US13956677

申请日：2013-08-01

Applicant: bioMérieux S.A. ,  STMicroelectronics S.r.l.

Inventor： Giuseppe Emanuele SPOTO ,  Luigi Giuseppe OCCHIPINTI ,  Cristian DALL'OGLIO ,  Crocifisso Marco Antonio RENNA ,  Laurent DRAZEK

IPC: C12Q1/68

CPC classification number: C12Q1/686 ,  B01L3/5027 ,  B01L2300/0816 ,  B01L2300/0864

Abstract: A microfluidic device (1000-1005), comprising: a semiconductor body (2) having a first side (2a) and a second side (2b) opposite to one another, and housing, at the first side, a plurality of wells (4), having a first depth; an inlet region (30) forming an entrance point for a fluid to be supplied to the wells; a main channel (6a) fluidically connected to the inlet region, and having a second depth; and a plurality of secondary channels (6b) fluidically connecting the main channel to a respective well, and having a third depth. The first depth is higher than the second depth, which in turn is higher than the third depth. According to an aspect, the microfluidic device further comprises a cover layer (8), arranged above the first side of the semiconductor body, configured for sealing the wells and provided with at least a first valve hole (54) which extends through the cover layer and overlaps, at least partially, the secondary channels; and a flexible layer (14), arranged above the cover layer and provided with at least a protrusion (74) extending through the first valve hole towards the semiconductor body and overlapping, at least partially, the secondary channels, the flexible layer being configured such that, when a pressure is applied on it, the protrusion contacts the semiconductor body and enters the secondary channels thus fluidically isolating the wells from one another.

Abstract translation: 一种微流体装置（1000-1005），包括：具有彼此相对的第一侧（2a）和第二侧（2b）的半导体本体（2），并且在第一侧容纳多个孔（4） ），具有第一深度; 形成用于供应给所述井的流体的入口点的入口区域（30） 与所述入口区流体连接并具有第二深度的主通道（6a） 以及多个次级通道（6b），其将主通道流体连接到相应的井，并且具有第三深度。 第一深度高于第二深度，其又高于第三深度。 根据一个方面，微流体装置还包括覆盖层（8），其布置在半导体主体的第一侧上方，构造成用于密封阱并且设置有至少第一阀孔（54），第一阀孔延伸穿过覆盖层 并且至少部分地与次要信道重叠; 和柔性层（14），其布置在覆盖层上方并且至少设置有延伸穿过第一阀孔朝向半导体主体并且至少部分地与次级沟道重叠的突起（74），柔性层被配置为 当施加压力时，突起与半导体本体接触并进入二次通道，从而将孔彼此流体隔离。