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公开(公告)号:US20210234045A1
公开(公告)日:2021-07-29
申请号:US16751380
申请日:2020-01-24
Applicant: GLOBALFOUNDRIES U.S, Inc.
Inventor: Arkadiusz Malinowski , Baofu Zhu , Judson R. Holt , Shiv Kumar Mishra
Abstract: One illustrative transistor device disclosed herein includes a gate structure positioned above a semiconductor substrate and first and second overall cavities formed in the semiconductor substrate on opposite sides of the gate structure. In this example, each of the first and second overall cavities comprise a substantially vertically oriented upper epitaxial cavity and a lower insulation cavity, wherein the substantially vertically oriented upper epitaxial cavity extends from an upper surface of the semiconductor substrate to the lower insulation cavity. The transistor also includes an insulation material positioned in at least a portion of the lower insulation cavity of each of the first and second overall cavities and epitaxial semiconductor material positioned in at least the substantially vertically oriented upper epitaxial cavity of each of the first and second overall cavities.