公开(公告)号：US5329271A

公开(公告)日：1994-07-12

申请号：US878429

申请日：1992-05-04

申请人： Hajime Inuzuka ,  Tsuyoshi Nakagawa ,  Kunihiko Hara

发明人： Hajime Inuzuka ,  Tsuyoshi Nakagawa ,  Kunihiko Hara

IPC分类号： G01L9/04 ,  G01L1/18 ,  G01L9/00 ,  G01P15/12 ,  H01L29/84 ,  G01L1/22

CPC分类号： G01L1/18 ,  G01P15/123

摘要： A semiconductor strain sensor includes a silicon substrate, a strain resistive element and electrodes. The silicon substrate has a deformable portion which is deformed when stress is applied to it. The strain resistive element is formed on the deformable portion and has an at least a first layer and a second layer which form a heterojunction between them. The first layer is doped with impurities so that a two-dimensional carrier gas layer is formed in the second layer near the heterojunction. The two-dimensional carrier gas layer has carriers originating from the impurities. The electrodes electrically contact the two dimensional carrier gas layer. Change of resistance of the strain resistive element in accordance with the stress is detected through the electrodes.

摘要翻译： 半导体应变传感器包括硅衬底，应变电阻元件和电极。 硅衬底具有可变形部分，当其施加应力时，可变形部分变形。 应变电阻元件形成在可变形部分上，并且具有在它们之间形成异质结的至少第一层和第二层。 第一层掺杂杂质，使得在异质结附近的第二层中形成二维载气层。 二维载气层具有源自杂质的载体。 电极与二维载气层电接触。 通过电极检测应变电阻元件根据应力的电阻变化。