公开(公告)号：US09070656B2

公开(公告)日：2015-06-30

申请号：US13915778

申请日：2013-06-12

Applicant: Micron Technology, Inc.

Inventor： Andy E. Hooper ,  Xiao Li ,  Shijian Luo

IPC: H01L23/34 ,  H01L23/36 ,  H01L23/10 ,  H01L23/367 ,  H01L21/56 ,  H01L25/065 ,  H01L23/00

CPC classification number: H01L23/36 ,  H01L21/563 ,  H01L23/10 ,  H01L23/3675 ,  H01L23/42 ,  H01L23/4275 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/83 ,  H01L25/0657 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/83385 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06568 ,  H01L2225/06589 ,  H01L2924/12042 ,  H01L2924/16251 ,  H01L2924/00

Abstract: Heat spreaders for dissipating heat from semiconductor devices comprise a contact surface located within a recess on an underside of the heat spreader, the contact surface being configured to physically and thermally attach to a semiconductor device, and a trench extending into the heat spreader adjacent to the contact surface sized and configured to receive underfill material extending from the semiconductor device into the trench. Related semiconductor device assemblies may include these heat spreaders and methods may include physically and thermally attaching these heat spreaders to semiconductor devices such that underfill material extends from a semiconductor device into the trench.

Abstract translation: 用于从半导体器件散热的散热器包括位于散热器下侧的凹部内的接触表面，该接触表面构造成物理地和热连接到半导体器件，以及延伸到与散热器相邻的散热器中的沟槽 接触表面的尺寸和构造以接收从半导体器件延伸到沟槽中的底部填充材料。 相关的半导体器件组件可以包括这些散热器，并且方法可以包括将这些散热器物理地和热连接到半导体器件，使得底部填充材料从半导体器件延伸到沟槽中。