公开(公告)号：US06725054B1

公开(公告)日：2004-04-20

申请号：US09606810

申请日：2000-06-28

申请人： Jong-Yoon Hwang ,  Hi-Chan Moon ,  Jong-Han Kim ,  Jin-Soo Park

发明人： Jong-Yoon Hwang ,  Hi-Chan Moon ,  Jong-Han Kim ,  Jin-Soo Park

IPC分类号： H04B700

CPC分类号： H04W52/283 ,  H04L1/20 ,  H04L1/201 ,  H04W52/143 ,  H04W52/24 ,  H04W52/241 ,  H04W52/247 ,  H04W52/282 ,  H04W52/288 ,  H04W52/44 ,  H04W52/54 ,  Y02D70/20

摘要： An apparatus and method of detecting whether data exists in a received signal while a mobile communication terminal is in discontinuous transmission mode is disclosed. The apparatus and method comprises generating and transmitting a forward power control command for providing the forward power control, and performing forward power control in a mobile communication system. According to the forward power control method, a power control command is generated based on a received frame including a plurality of slots each of which includes power control bits. The ratio of the power control bit energy to noise energy, which is given by a ratio of the accumulated energy of the power control bits in the slots of the received frame to an accumulated energy value of noise in the slots of the received frame, is provided, and the power control command based on a ratio of the accumulated energy value of traffic symbol bits in the slots to the accumulated energy value of the power control bits is generated when the provided ratio of the power control bits to noise is acceptable.

摘要翻译： 公开了一种在移动通信终端处于不连续传输模式时检测接收信号中是否存在数据的装置和方法。 该装置和方法包括生成和发送用于提供正向功率控制的前向功率控制命令，以及在移动通信系统中执行正向功率控制。 根据正向功率控制方法，基于包括多个时隙的接收帧生成功率控制命令，每个时隙包括功率控制位。 由接收帧的时隙中的功率控制位的累积能量与接收帧的时隙中累积的噪声能量值的比率给出的功率控制比特能量与噪声能量的比率是 并且当所提供的功率控制比特与噪声的比率是可接受的时，产生基于时隙中的业务符号比特的累积能量值与功率控制比特的累加能量值的比率的功率控制命令。

公开(公告)号：US06482708B2

公开(公告)日：2002-11-19

申请号：US09952088

申请日：2001-09-13

申请人： Jeong-hyuk Choi ,  Jong-han Kim

发明人： Jeong-hyuk Choi ,  Jong-han Kim

IPC分类号： H01L21336

CPC分类号： H01L29/66825 ,  G11C16/0416

摘要： A nonvolatile memory device having a lightly doped source and a method for manufacturing the same are provided. In the nonvolatile memory device, a first insulating layer, a floating gate, a second insulating layer and a control gate are sequentially formed on a semiconductor substrate, and a drain, a lightly doped source and a highly doped source are formed around a surface of the semiconductor substrate. At this time, the highly doped source is shallower than the drain without being overlapped by the floating gate. Thus, the integration of the memory cell can be increased, and the trapping of electrons is reduced in the first insulating layer formed between the floating gate and the lightly doped source, to thereby enhance the characteristics of the memory cell.