公开(公告)号：US08747680B1

公开(公告)日：2014-06-10

申请号：US13830082

申请日：2013-03-14

Applicant: Everspin Technologies, Inc.

Inventor： Sarin A. Deshpande ,  Sanjeev Aggarwal

IPC: B44C1/22

CPC classification number: H01L43/12 ,  G11B5/84 ,  G11C11/161 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08

Abstract: A method of manufacturing a magnetoresistive-based device having magnetic material layers formed between a first electrically conductive layer and a second electrically conductive layer, the magnetic materials layers including a tunnel barrier layer formed between a first magnetic materials layer and a second magnetic materials layer, including removing the first electrically conductive layer and the first magnetic materials layer unprotected by a first hard mask, to form a first electrode and a first magnetic materials, respectively; and removing the tunnel barrier layer, second magnetic materials layer, and second electrically conductive layer unprotected by the second hard mask to form a tunnel barrier, second magnetic materials, and a second electrode.

Abstract translation: 一种制造具有在第一导电层和第二导电层之间形成的磁性材料层的基于磁阻的器件的方法，所述磁性材料层包括在第一磁性材料层和第二磁性材料层之间形成的隧道势垒层， 包括去除未被第一硬掩模保护的第一导电层和第一磁性材料层，分别形成第一电极和第一磁性材料; 以及去除不受第二硬掩模保护的隧道势垒层，第二磁性材料层和第二导电层，以形成隧道势垒，第二磁性材料和第二电极。