Controlled impedance lines connected to optoelectronic devices
    112.
    发明授权
    Controlled impedance lines connected to optoelectronic devices 失效
    连接到光电子器件的受控阻抗线

    公开(公告)号:US5519363A

    公开(公告)日:1996-05-21

    申请号:US251061

    申请日:1994-05-31

    IPC分类号: H01P3/08 H01P11/00

    CPC分类号: H01P3/085 H01P3/081

    摘要: A dielectric substrate of a material such as silicon is used to provide controlled impedance waveguides for coupling an optoelectronic device to an electronic device. The impedance is controlled by varying the thickness of the dielectric between the signal lines and the ground plane. In the preferred embodiment, the crystallographic structure of the silicon is employed to achieve great precision of the dielectric thickness.

    摘要翻译: 使用诸如硅的材料的介质衬底来提供用于将光电子器件耦合到电子器件的受控阻抗波导。 通过改变信号线和接地平面之间的电介质的厚度来控制阻抗。 在优选实施例中,硅的晶体结构用于实现电介质厚度的高精度。