Apparatus and method for receiving a signal in a communication system
    132.
    发明申请
    Apparatus and method for receiving a signal in a communication system 审中-公开
    用于在通信系统中接收信号的装置和方法

    公开(公告)号:US20070190945A1

    公开(公告)日:2007-08-16

    申请号:US11649102

    申请日:2007-01-03

    Abstract: An apparatus and method for receiving a signal in a communication system are provided. Information related to a first modulation scheme applied to a frequency domain in a serving base station is received from the serving base station. Information related to a second modulation scheme applied to the frequency domain in at least one neighbor base station is received from the at least one neighbor base station. A signal is received in the frequency domain. Channel state information is generated by estimating the received signal. A determination is made as to whether to use interference cancellation using the channel state information, the first modulation scheme information and the second modulation scheme information.

    Abstract translation: 提供了一种用于在通信系统中接收信号的装置和方法。 从服务基站接收与应用于服务基站中的频域的第一调制方式有关的信息。 从至少一个相邻基站接收与应用于至少一个相邻基站中的频域的第二调制方案有关的信息。 在频域中接收信号。 通过估计接收信号来生成信道状态信息。 确定使用信道状态信息,第一调制方式信息和第二调制方式信息是否使用干扰消除。

    Methods for planarizing a metal layer
    133.
    发明授权
    Methods for planarizing a metal layer 有权
    平面化金属层的方法

    公开(公告)号:US07192869B2

    公开(公告)日:2007-03-20

    申请号:US10935662

    申请日:2004-09-07

    Applicant: Joo-Hyun Lee

    Inventor: Joo-Hyun Lee

    CPC classification number: H01L21/7684 H01L21/3212

    Abstract: Methods for planarizing a metal layer in a semiconductor device are disclosed. An illustrated example method comprises dividing a metal layer into a first section and a second section. A polishing removal rate associated with the first section is greater than a polishing removal rate associated with the second section. The method also includes forming an oxide layer on the first section of the metal layer; and planarizing the oxide layer and the metal layer using a chemical mechanical polishing process.

    Abstract translation: 公开了用于平面化半导体器件中的金属层的方法。 图示的示例方法包括将金属层分成第一部分和第二部分。 与第一部分相关联的抛光移除速率大于与第二部分相关联的抛光移除速率。 该方法还包括在金属层的第一部分上形成氧化物层; 以及使用化学机械抛光工艺平坦化氧化物层和金属层。

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