Abstract:
Channel estimation apparatus and method for interference cancellation in a mobile communication system are provided. The channel estimation method includes detecting a preamble from a received signal and estimating a primary channel using the detected preamble; calculating a short-term correlation matrix using the primary channel; and estimating a secondary channel using the calculated short-term correlation matrix according to a certain channel estimation scheme.
Abstract:
An apparatus and method for receiving a signal in a communication system are provided. Information related to a first modulation scheme applied to a frequency domain in a serving base station is received from the serving base station. Information related to a second modulation scheme applied to the frequency domain in at least one neighbor base station is received from the at least one neighbor base station. A signal is received in the frequency domain. Channel state information is generated by estimating the received signal. A determination is made as to whether to use interference cancellation using the channel state information, the first modulation scheme information and the second modulation scheme information.
Abstract:
Methods for planarizing a metal layer in a semiconductor device are disclosed. An illustrated example method comprises dividing a metal layer into a first section and a second section. A polishing removal rate associated with the first section is greater than a polishing removal rate associated with the second section. The method also includes forming an oxide layer on the first section of the metal layer; and planarizing the oxide layer and the metal layer using a chemical mechanical polishing process.
Abstract:
Provided is a nonvolatile memory device and a method of manufacturing the same. The nonvolatile memory device includes a semiconductor substrate on which a source, a drain, and a channel region are formed, a tunneling oxide film formed on the channel region, a floating gate formed of a fullerene material on the tunneling oxide, a blocking oxide film formed on the floating gate, and a gate electrode formed on the blocking oxide film.