公开(公告)号：US20180012549A1

公开(公告)日：2018-01-11

申请号：US15640647

申请日：2017-07-03

Applicant: InnoLux Corporation

Inventor： Kuan-Feng LEE ,  Yuan-Lin WU

IPC: H01L27/32 ,  G06F3/041

CPC classification number: G09G3/3266 ,  G06F3/0412 ,  G09G3/3225 ,  H01L27/323 ,  H01L27/3262 ,  H01L27/3276

Abstract: A display device is provided. The display device includes a substrate having a first surface and a second surface opposite to the first surface. The display device also includes a first conductive layer disposed on the first surface and a second conductive layer disposed on the second surface. The display device further includes a processing unit disposed on the second surface and is electrically connected to the processing unit and a first connective portion which at least partially disposed in the substrate, and penetrating from the first surface to the second surface, wherein the first conductive layer is electrically connected to the second conductive layer through the first connective portion.

公开(公告)号：US20170117303A1

公开(公告)日：2017-04-27

申请号：US15333232

申请日：2016-10-25

Applicant: InnoLux Corporation

Inventor： Kuan-Feng LEE ,  Yuan-Lin WU ,  Shou-Pu YEH

IPC: H01L27/12 ,  H01L21/66 ,  H01L29/786

CPC classification number: H01L27/1233 ,  H01L22/14 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/78678 ,  H01L29/7869 ,  H01L29/78696

Abstract: A display device is disclosed, which includes: a substrate having a display region; and a first thin film transistor (TFT) unit disposed on the display region and comprising: a first gate electrode disposed on the substrate; a first insulating layer disposed on the first gate electrode; a first semiconductor layer disposed on the first insulating layer, wherein the first semiconductor layer has a top surface which comprises a concave region and a non-concave region; and a first source electrode and a first drain electrode disposed on the top surface of the first semiconductor layer, wherein the first semiconductor layer has a first thickness corresponding to the concave region, and the first semiconductor layer has a second thickness corresponding to the non-concave region, wherein the second thickness is greater than the first thickness.