公开(公告)号：US06901011B2

公开(公告)日：2005-05-31

申请号：US10417416

申请日：2003-04-15

申请人： Rino Micheloni ,  Aldo Losavio

发明人： Rino Micheloni ,  Aldo Losavio

IPC分类号： G06F11/10 ,  G11C16/06

CPC分类号： G06F11/1068

摘要： The method for using a nonvolatile memory (1) having a plurality of cells (14), each of which stores a datum, is based upon the steps of performing an modification operation of erasing/programming (22) the data of the memory; verifying (23) the correctness of the data of the memory cells; and, if the step of verifying (23) has revealed at least one incorrect datum, correcting on-th-field (46) the incorrect datum, using an error correcting code. The verification (23) of the correctness of the data is performed by determining (23) the number of memory cells storing an incorrect datum; if the number of memory cells storing the incorrect datum is less than or equal to a threshold (46), the erroneous datum is corrected by the error correction code; otherwise, new erasing/programming pulses are supplied.

摘要翻译： 使用具有存储数据的多个单元（14）的非易失性存储器（1）的方法基于执行擦除/编程（22）存储器的数据的修改操作的步骤; 验证（23）存储器单元的数据的正确性; 并且如果验证（23）的步骤已经透露了至少一个不正确的数据，则使用纠错码来校正不正确的数据（46）。 通过确定（23）存储不正确数据的存储单元的数量来执行数据的正确性的验证（23） 如果存储不正确的数据的存储单元的数量小于或等于阈值（46），则错误校正码校正错误的数据; 否则，将提供新的擦除/编程脉冲。

公开(公告)号：US06225231B1

公开(公告)日：2001-05-01

申请号：US09324562

申请日：1999-06-03

申请人： Aldo Losavio

发明人： Aldo Losavio

IPC分类号： H01L21302

CPC分类号： H01L21/76213

摘要： A method for recovering the original properties of a silicon oxide film that has suffered a high energy implantation of dopants in the underlying silicon substrate, includes a brief heat treatment without causing an excessive lateral diffusion in the silicon substrate of the implanted dopants. Heat treating in an oven at a temperature of 800° C. for few minutes per wafer, which was subjected to high energy implantation, makes it possible to recover etch rate characteristics that are practically similar to those of the original non-implanted silicon oxide.

摘要翻译： 用于回收在下面的硅衬底中遭受高能量注入掺杂剂的氧化硅膜的原始特性的方法包括短暂的热处理，而不会在注入的掺杂剂的硅衬底中引起过度的横向扩散。 在800℃的温度下对每个晶片进行高能量注入几分钟的热处理使得可以恢复实际上类似于原始未注入的氧化硅的蚀刻速率特性。