公开(公告)号：US20120048467A1

公开(公告)日：2012-03-01

申请号：US13040149

申请日：2011-03-03

Applicant: Chetan Mahadeswaraswamy ,  Kartik Ramaswamy ,  Bryan Liao ,  Sergio Shoji ,  Duy D. Nguyen ,  Hamid Noorbakhsh ,  David Palagashvili

Inventor： Chetan Mahadeswaraswamy ,  Kartik Ramaswamy ,  Bryan Liao ,  Sergio Shoji ,  Duy D. Nguyen ,  Hamid Noorbakhsh ,  David Palagashvili

IPC: C23F1/08 ,  F28F27/00 ,  G05D7/06 ,  G05D23/19 ,  B05C11/00 ,  C23C16/52

CPC classification number: G05D23/19 ,  G05B15/02 ,  H01J37/32522 ,  H01J37/32724 ,  H01J37/32908 ,  H01J37/3299 ,  H01L21/67248

Abstract: Methods and systems for controlling temperatures in plasma processing chamber for a wide range of setpoint temperatures and reduced energy consumption. Temperature control is coordinated between a coolant liquid loop and a heat source by a control algorithm implemented by the plasma processing module controller. The control algorithm may completely stop the flow of coolant liquid to a temperature-controlled component in response to a feedback signal indicating an actual temperature is below the setpoint temperature. The control algorithm may further be based at least in part on a feedforward control signal derived from a plasma power or change in plasma power input into the processing chamber during process recipe execution.

Abstract translation: 用于控制等离子体处理室中的温度的方法和系统，用于广泛的设定点温度和降低的能量消耗。 通过等离子体处理模块控制器实现的控制算法，在冷却液回路和热源之间进行温度控制。 控制算法可以响应于指示实际温度低于设定点温度的反馈信号，完全停止冷却剂液体流向温度控制部件的流动。 控制算法还可以至少部分地基于从等离子体功率导出的前馈控制信号或在处理配方执行期间输入到处理室中的等离子体功率的改变。

公开(公告)号：US20110303641A1

公开(公告)日：2011-12-15

申请号：US13111384

申请日：2011-05-19

Applicant: Chetan MAHADESWARASWAMY ,  Kallol BERA ,  Larry D. ELIZAGA

Inventor： Chetan MAHADESWARASWAMY ,  Kallol BERA ,  Larry D. ELIZAGA

IPC: C23F1/00 ,  F28D15/00 ,  C23F1/08

CPC classification number: H01J37/02 ,  F28D2021/0028 ,  F28F7/02 ,  H01J37/32522 ,  H01J37/32724 ,  H01J37/32908 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67248

Abstract: Components and systems for controlling a process or chamber component temperature as a plasma process is executed by plasma processing apparatus. A first heat transfer fluid channel is disposed in a component subjacent to a working surface disposed within a plasma processing chamber such that a first length of the first channel subjacent to a first temperature zone of the working surface comprises a different heat transfer coefficient, h, or heat transfer area, A, than a second length of the first channel subjacent to a second temperature zone of the working surface. In embodiments, different heat transfer coefficients or heat transfer areas are provided as a function of temperature zone to make more independent the temperature control of the first and second temperature zones.

Abstract translation: 通过等离子体处理装置执行用于控制作为等离子体处理的工艺或室部件温度的部件和系统。 第一传热流体通道设置在位于等离子体处理室内的工作表面的下方的部件中，使得位于工作表面的第一温度区域下方的第一通道的第一长度包括不同的传热系数h， 或传热面积A比第一通道的第二长度低于工作表面的第二温度区域。 在实施例中，提供不同的传热系数或传热面积作为温度区域的函数，以使第一和第二温度区域的温度控制更独立。