公开(公告)号：US20090026576A1

公开(公告)日：2009-01-29

申请号：US11782154

申请日：2007-07-24

Applicant: Kuang-Yeh Chang ,  Shing-Ren Sheu ,  Chung Jen Ho

Inventor： Kuang-Yeh Chang ,  Shing-Ren Sheu ,  Chung Jen Ho

IPC: H01L29/00 ,  H01L21/336

CPC classification number: H01L23/5252 ,  H01L21/26586 ,  H01L27/115 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An anti-fuse is provided. The anti-fuse includes a substrate, a gate disposed over the substrate, a gate dielectric layer sandwiched between the substrate and the gate, and two source/drain regions in the substrate at respective sides of the gate. The gate and the substrate have the same conductive type, but the conductive type of the gate and the substrate is different from that of the two source/drain regions.

Abstract translation: 提供反熔丝。 反熔丝包括衬底，设置在衬底上的栅极，夹在衬底和栅极之间的栅极电介质层以及在栅极的相应侧的衬底中的两个源极/漏极区域。 栅极和衬底具有相同的导电类型，但是栅极和衬底的导电类型与两个源极/漏极区的导电类型不同。