公开(公告)号：US20120287956A1

公开(公告)日：2012-11-15

申请号：US13515024

申请日：2010-11-12

Applicant: Dimitri Dini ,  Marc Schillgalies

Inventor： Dimitri Dini ,  Marc Schillgalies

IPC: H01S5/02 ,  H01L21/78

CPC classification number: H01S5/32341 ,  H01S5/0201 ,  H01S5/02272 ,  H01S5/0425 ,  H01S5/2201 ,  H01S2304/12

Abstract: A semiconductor laser includes a semiconductor body having an active region that generates radiation and a ridge-shaped region, wherein the ridge-shaped region has a longitudinal axis running along an emission direction, a central axis of the semiconductor body runs in the emission direction and the longitudinal axis is arranged in a manner offset with respect to the central axis in a transverse direction.

Abstract translation: 半导体激光器包括具有产生辐射的有源区域和脊形区域的半导体本体，其中脊形区域具有沿发射方向延伸的纵向轴线，半导体主体的中心轴线沿着发射方向延伸，并且 纵向轴线以横向相对于中心轴线偏移的方式布置。