ASSEMBLY OF SEMICONDUCTOR AND HIGHLY THERMALLY CONDUCTIVE HEAT-DISSIPATING SUBSTRATES

    公开(公告)号:US20180248336A1

    公开(公告)日:2018-08-30

    申请号:US15863662

    申请日:2018-01-05

    IPC分类号: H01S5/024 H01S5/022

    摘要: An assembly of semiconductor and highly thermally conductive heat-dissipating substrates includes a thermally conductive metal substrate, a supporting substrate, and a vertical heat-dissipating block. The thermally conductive metal substrate comprises a substrate body, a receiving groove in the substrate body, and a thin-layer portion at a bottom side of the receiving groove. The supporting substrate is provided in the receiving groove. The two vertically opposite sides of the supporting substrate respectively form a carrying surface for carrying a laser diode LD and a heat-dissipating surface in contact with the thin-layer portion at the bottom side of the receiving groove. The vertical heat-dissipating block is provided on a side of the thermally conductive metal substrate opposing to a side with the receiving groove.