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11.发明申请MASK BLANK PROVIDING SYSTEM, MASK BLANK PROVIDING METHOD, MASK BLANK TRANSPARENT SUBSTRATE MANUFACTURING METHOD, MASK BLANK MANUFACTURING METHOD, AND MASK MANUFACTURING METHOD 有权MASK BLANK提供系统，MASK BLANK提供方法，MASK BLANK透明基板制造方法，MASK BLANK制造方法和MASK制造方法公开(公告)号：US20110262847A1
公开(公告)日：2011-10-27
申请号：US13174397
申请日：2011-06-30
IPC分类号： G03F1/00 , H01L21/027
CPC分类号： G03F1/60 , G03F1/50 , Y10T428/31616
摘要： A mask blank manufacturing department manufactures a mask blank by forming a thin film to be a mask pattern on a mask blank transparent substrate. When providing the mask blank to a mask manufacturing department, the mask blank manufacturing department provides optical characteristic information (transmittance variation) of the mask blank transparent substrate and optical characteristic information (transmittance variation and/or phase difference variation) of the mask blank to the mask manufacturing department. The optical characteristic information of the mask blank transparent substrate is provided to the mask blank manufacturing department from a materials processing department that manufactures mask blank transparent substrates.
摘要翻译： 掩模制造部门通过在掩模板透明基板上形成作为掩模图案的薄膜来制造掩模坯料。 当掩模制造部门提供掩模坯料时，掩模制造部门提供掩模毛坯透明基板的光学特性信息（透射率变化）和掩模毛坯的光学特性信息（透射率变化和/或相位差变化） 面具制造部门。 掩模坯料透明基板的光学特性信息由制造掩模板透明基板的材料加工部门提供给掩模坯料制造部。
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12.发明授权Mask blank substrate, mask blank, exposure mask, mask blank substrate manufacturing method, and semiconductor manufacturing method 有权掩模空白基板，掩模坯料，曝光掩模，掩模基板制造方法以及半导体制造方法公开(公告)号：US07592104B2
公开(公告)日：2009-09-22
申请号：US11237970
申请日：2005-09-29
IPC分类号： G03F1/00
CPC分类号： G03F1/60 , G03F1/50 , Y10T428/31616
摘要： In a mask blank substrate to be chucked by a mask stage of an exposure system, the flatness of a rectangular flatness measurement area excluding an area of 2 mm inward from an outer peripheral end surface on a main surface of the mask blank substrate on its side to be chucked by the mask stage is 0.6 μm or less, and at least three of four corner portions of the flatness measurement area each have a shape that rises toward the outer peripheral side.
摘要翻译： 在通过曝光系统的掩模台夹持的掩模基板中，除了掩模基板的主面的外周端面外侧的2mm外侧的矩形平坦度测量区域的平坦度 被掩模台夹持的面积为0.6μm以下，平坦度测量区域的四个角部中的至少三个分别具有朝向外周侧上升的形状。
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13.发明授权Substrate for reticle and method of manufacturing the substrate, and mask blank and method of manufacturing the mask blank 有权掩模用基板和制造基板的方法，以及掩模板和制造掩模板的方法公开(公告)号：US07579120B2
公开(公告)日：2009-08-25
申请号：US10549901
申请日：2004-03-18
申请人： Hiroyuki Akagawa
发明人： Hiroyuki Akagawa
IPC分类号： G03F1/00
CPC分类号： G03F1/60
摘要： In a reticle substrate is used for forming a reticle held on a stepper and has main surfaces opposing each other, side faces, and chamfered surfaces formed between main surfaces and side faces, a flatness-measuring area is defined as an area excluding a peripheral area of a width of 3 mm inwardly laid from a boundary between the main surface and the chamfered surfaces and has a flatness of 0.5 μm or less, and a maximum height from a reference plane falls between −1 and 0 μm at the boundary between the main surface and the chamfered surface.
摘要翻译： 在掩模版基板中，用于形成保持在步进机上的掩模版，并且具有彼此相对的主表面，形成在主表面和侧面之间的侧面和倒角表面，平坦度测量区域被定义为不包括周边区域的区域 从主表面和倒角表面之间的边界向内铺设宽度为3mm的平坦度为0.5μm或更小，并且与基准平面的最大高度在主要的边界之间的边界处落在-1和0μm之间 表面和倒角表面。
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公开(公告)号：US20060068300A1
公开(公告)日：2006-03-30
申请号：US11237970
申请日：2005-09-29
CPC分类号： G03F1/60 , G03F1/50 , Y10T428/31616
摘要： In a mask blank substrate to be chucked by a mask stage of an exposure system, the flatness of a rectangular flatness measurement area excluding an area of 2 mm inward from an outer peripheral end surface on a main surface of the mask blank substrate on its side to be chucked by the mask stage is 0.6 μm or less, and at least three of four corner portions of the flatness measurement area each have a shape that rises toward the outer peripheral side.
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