公开(公告)号：US12092965B2

公开(公告)日：2024-09-17

申请号：US17313135

申请日：2021-05-06

申请人： ASML Netherlands B.V.

发明人： Venugopal Vellanki ,  Vivek Kumar Jain ,  Stefan Hunsche

IPC分类号： G06F30/20 ,  G03F1/60 ,  G03F1/84 ,  G03F7/00 ,  G06F30/398 ,  G06N20/00 ,  G06F119/18

CPC分类号： G03F7/7065 ,  G03F1/60 ,  G03F1/84 ,  G03F7/705 ,  G03F7/70525 ,  G03F7/70641 ,  G03F7/70666 ,  G06F30/398 ,  G06N20/00 ,  G06F30/20 ,  G06F2119/18

摘要： A defect prediction method for a device manufacturing process involving processing one or more patterns onto a substrate, the method including: determining values of one or more processing parameters under which the one or more patterns are processed; and determining or predicting, using the values of the one or more processing parameters, an existence, a probability of existence, a characteristic, and/or a combination selected from the foregoing, of a defect resulting from production of the one or more patterns with the device manufacturing process.

公开(公告)号：US20240192584A1

公开(公告)日：2024-06-13

申请号：US18080186

申请日：2022-12-13

申请人： SK enpulse Co., Ltd.

发明人： Hyung-joo LEE ,  Kyuhun KIM ,  GeonGon LEE ,  Seong Yoon KIM ,  Suk Young CHOI ,  Suhyeon KIM ,  Sung Hoon SON ,  Min Gyo JEONG ,  Inkyun SHIN

IPC分类号： G03F1/50 ,  G02F1/00 ,  G02F1/1335 ,  G03F1/60 ,  G03F1/80 ,  H01L21/285

CPC分类号： G03F1/50 ,  G02F1/0063 ,  G02F1/133512 ,  G03F1/60 ,  G03F1/80 ,  H01L21/28568

摘要： A blank mask includes a light-transmitting substrate; and a light-shielding film, disposed on the light-transmitting substrate, including a first light-shielding layer and a second light-shielding layer disposed on the first light-shielding layer. The second light-shielding layer includes at least one of a transition metal, oxygen, or nitrogen, or any combination thereof. A reflectance of a surface of the light-shielding film with respect to light having a wavelength of 193 nm is 20% or more and 40% or less. A hardness value of the second light-shielding layer is 0.3 kPa or more and 0.55 kPa or less.

公开(公告)号：US20240103356A1

公开(公告)日：2024-03-28

申请号：US18528914

申请日：2023-12-05

申请人： InnoLux Corporation

发明人： Chien-Hsing LEE ,  Chin-Lung TING ,  Jung-Chuan WANG ,  Hong-Sheng HSIEH

IPC分类号： G03F1/60

CPC分类号： G03F1/60

摘要： An electronic device is provided. The electronic device includes a base and a conductive layer that is disposed on the base and patterned by a plurality of processes. The plurality of processes include providing a mask substrate. The mask substrate includes a first substrate and a patterned substrate. In the cross-sectional view, the width of the first substrate is greater than or equal to the width of the patterned substrate. The plurality of processes include arranging the mask substrate and the base correspondingly. The plurality of processes also include performing exposure and development processes on the conductive layer for patterning the conductive layer, and removing the mask substrate.

公开(公告)号：US20240094621A1

公开(公告)日：2024-03-21

申请号：US18274183

申请日：2022-02-08

申请人： HOYA CORPORATION

发明人： Kazutake TANIGUCHI

IPC分类号： G03F1/24 ,  G03F1/60 ,  G03F1/80

CPC分类号： G03F1/24 ,  G03F1/60 ,  G03F1/80

摘要： A mask blank includes a substrate having a main surface on which a multilayer reflective film and the pattern-forming thin film are provided in this order. The thin film contains tantalum, niobium, and nitrogen. An X-ray diffraction pattern obtained by analyzing the thin film by Out-of-Plane measurement of X-ray diffraction satisfies the relationship of at least one of Imax1/Iavg1≤7.0 and Imax2/Iavg2≤1.0, where Imax1 is a maximum value of diffraction intensity at a diffraction angle 2θ in a range of 34 to 36 degrees, Iavg1 is an average value of diffraction intensity at a diffraction angle 2θ in a range 32 to 34 degrees, Imax2 is a maximum value of diffraction intensity at a diffraction angle 2θ of 40 to 42 degrees, and Iavg2 is an average value of diffraction intensity at a diffraction angle 2θ in a range of 38 to 40 degrees.

公开(公告)号：US11868040B2

公开(公告)日：2024-01-09

申请号：US17681145

申请日：2022-02-25

申请人： InnoLux Corporation

发明人： Chien-Hsing Lee ,  Chin-Lung Ting ,  Jung-Chuan Wang ,  Hong-Sheng Hsieh

IPC分类号： G03F1/60

CPC分类号： G03F1/60

摘要： A method for forming a target substrate is provided. The method includes providing a mask substrate. The method also includes providing a second base with a material layer. The method further includes arranging the mask substrate and the second base correspondingly. In addition, the method includes performing exposure and development processes on the material layer to form the target substrate and removing the mask substrate.

公开(公告)号：US20180335692A1

公开(公告)日：2018-11-22

申请号：US15975297

申请日：2018-05-09

申请人： S&S TECH Co., Ltd.

发明人： Kee-Soo NAM ,  Cheol SHIN ,  Jong-Hwa LEE ,  Chul-Kyu YANG ,  Chang-Jun KIM ,  Seung-Hyup SHIN ,  Gil-Woo KONG

IPC分类号： G03F1/32 ,  G03F1/46 ,  G03F1/00 ,  G03F1/80 ,  G03F1/60

CPC分类号： G03F1/32 ,  G03F1/0076 ,  G03F1/46 ,  G03F1/60 ,  G03F1/80

摘要： Disclosed are a phase-shift blankmask and a phase-shift photomask, which includes a phase-shift film made of silicon (Si) or a silicon (Si) compound on a transparent substrate and has a high transmittance characteristic. In the phase-shift blankmask according to the present disclosure, the phase-shift film has a high transmittance of 50% or higher, thereby achieving a micro pattern smaller than or equal to 32 nm, preferably 14 nm, and more preferably 10 nm for a semiconductor device, for example, a DRAM, a flash memory, a logic device.

公开(公告)号：US20180217492A1

公开(公告)日：2018-08-02

申请号：US15881968

申请日：2018-01-29

申请人： ASAHI GLASS COMPANY, LIMITED

发明人： Yuzo OKAMURA

IPC分类号： G03F1/60 ,  B32B17/06 ,  G03F1/22 ,  G03F1/52 ,  G03F1/54 ,  G03F1/24

CPC分类号： G03F1/60 ,  B32B17/06 ,  B32B2307/71 ,  G03F1/22 ,  G03F1/24 ,  G03F1/52 ,  G03F1/54

摘要： A glass substrate for a mask blank includes a first surface and a second surface. The first surface and second surface face each other. Each of the first surface and the second surface is approximately square having a vertical length and a horizontal length being equal to the vertical length. The first surface of the glass substrate has specific profile properties.

公开(公告)号：US20170277034A1

公开(公告)日：2017-09-28

申请号：US15467031

申请日：2017-03-23

申请人： ASAHI GLASS COMPANY, LIMITED

发明人： Nobuhiko IKENOYA ,  Yusuke HIRABAYASHI

IPC分类号： G03F1/24 ,  G03F1/60 ,  G03F1/22

CPC分类号： G03F1/24 ,  G03F1/22 ,  G03F1/60

摘要： In a substrate for use as a mask blank including a first main surface, a normal region, a frame-shaped region and inner region are present on the first main surface. The frame-shaped region includes first to fourth corner region and first to fourth middle region. The inner region has a flatness of 100 nm or less, the flatness being determined on the basis of a least-squares plane PP1 of the normal region. When one of the corner regions is referred to as an n-th corner region and two middle regions nearest to the n-th corner region are respectively referred to as a first near middle region and a second near middle region, the specific relationship regarding the surface profile is satisfied in the n-th corner region and the first and second near middle regions.

公开(公告)号：US20170219920A1

公开(公告)日：2017-08-03

申请号：US15431306

申请日：2017-02-13

申请人： Carl Zeiss SMT GmbH

发明人： Peter Huber

IPC分类号： G03F1/24 ,  G03F1/46 ,  G03F7/20 ,  G03F1/60 ,  G01N21/33 ,  G03F1/44 ,  G03F1/54

CPC分类号： G03F1/24 ,  G01N21/33 ,  G03F1/44 ,  G03F1/46 ,  G03F1/54 ,  G03F1/58 ,  G03F1/60 ,  G03F7/70058 ,  G03F7/70591 ,  G03F7/70616 ,  G03F7/70941

摘要： A mask (M) for EUV lithography includes: a substrate (7), a first surface region (A1) formed by a surface (8a) of a multilayer coating (8) embodied to reflect EUV radiation (27), said surface (8a) facing away from the substrate (7), and a second surface region (A2) formed by a surface (18a) of a further coating (18) embodied to reflect DUV radiation (28) and to suppress the reflection of EUV radiation (27), said surface (18a) facing away from the substrate (7). The further coating is a multilayer coating (18). Also disclosed are an EUV lithography apparatus that includes such a mask (M) and a method for determining a contrast proportion caused by DUV radiation when imaging a mask (M) onto a light-sensitive layer.

公开(公告)号：US09690189B2

公开(公告)日：2017-06-27

申请号：US14774267

申请日：2014-06-19

申请人： HOYA CORPORATION

发明人： Masaru Tanabe

IPC分类号： G03F1/50 ,  G03F7/20 ,  H01L21/027 ,  G03F1/60 ,  C03C15/02 ,  C03C17/22

CPC分类号： G03F1/60 ,  C03C15/02 ,  C03C17/22 ,  G03F1/50 ,  G03F7/20 ,  H01L21/0274

摘要： Provided are a mask blank substrate which has effectively and extremely high principal surface flatness while a reduction in the manufacturing throughput of the mask blank substrate is suppressed, a mask blank, and a transfer mask. Also provided are manufacturing methods therefor.A virtual reference surface that becomes an optically effective flat reference surface defined by a Zernike polynomial which is composed of only terms in which the order of a variable related to a radius is the second or lower order, and includes one or more terms in which the order of the variable related to the radius is the second order is set, and a mask blank substrate satisfying the condition that data (PV value) relating to the difference between the maximum value and the minimum value of the difference data between the reference surface and the measured shape of the mask blank substrate is one-eighth or less of an exposure wavelength (A) is selected.