公开(公告)号：US20080179285A1

公开(公告)日：2008-07-31

申请号：US11657523

申请日：2007-01-25

Applicant: Hao Li ,  HongTao Ma ,  HongXin Fang ,  XiaoFeng Qiao

Inventor： Hao Li ,  HongTao Ma ,  HongXin Fang ,  XiaoFeng Qiao

IPC: H01L21/3065 ,  H01L21/683

CPC classification number: H01L21/68771 ,  H01L21/67069 ,  H01L21/67253 ,  H01L21/68757 ,  H01L21/68785

Abstract: A wafer holding device for etching process, includes a base pallet; a cover pallet disposed on the base pallet, the cover pallet having at least one receiving hole defined therein; a base pad located on the base pallet and contained in the receiving hole; and a wafer jig placed on the base pad and contained in the receiving hole. At least one gas-diluting recess is formed in a surface of the cover pallet, the surface being spaced away from the base pallet, the gas-diluting recess being communicated with the receiving hole to dilute byproduct gases generated during the etching process. The invention also discloses a method for controlling etch rate of a wafer to be etched during an etching process.

Abstract translation: 一种用于蚀刻工艺的晶片保持装置，包括基底托盘; 盖托盘，其设置在所述基托盘上，所述盖托盘具有限定在其中的至少一个容纳孔; 基座，位于所述基板上并容纳在所述容纳孔中; 以及放置在基座上并容纳在容纳孔中的晶片夹具。 在盖板的表面中形成至少一个气体稀释凹槽，该表面与基板间隔开，气体稀释凹槽与接收孔连通，以稀释在蚀刻过程中产生的副产物气体。 本发明还公开了一种用于在蚀刻工艺期间控制要蚀刻的晶片的蚀刻速率的方法。