公开(公告)号：US20070065678A1

公开(公告)日：2007-03-22

申请号：US10575031

申请日：2004-10-06

申请人： Kyung-hyun Ko ,  Ha-yong Lee ,  Jae-hong Lee ,  Hung-sang Lee ,  Jae-jung Lee

发明人： Kyung-hyun Ko ,  Ha-yong Lee ,  Jae-hong Lee ,  Hung-sang Lee ,  Jae-jung Lee

IPC分类号： B32B9/00 ,  B32B19/00 ,  H05H1/24 ,  B05D1/12 ,  B05D3/02

CPC分类号： H01L21/6833 ,  C23C16/4586 ,  C23C24/04

摘要： The present invention relates to an electro-static chuck with non-sintered AlN and a method of preparing the same. Especially, the present invention relates to the electro-static chuck with non-sintered AlN which having coated aluminum nitride (AlN) layer as a dielectric one on the purpose of chucking the wafers in the process of wafers and a method of preparing the same. The electro-static chuck of the present invention has excellent dielectric characteristics, bonding strength and thermal conductivity by forming an AlN layer as a dielectric one without sintering process or bonding process with binders.

摘要翻译： 本发明涉及具有非烧结AlN的静电卡盘及其制备方法。 特别地，本发明涉及具有非烧结AlN的静电卡盘及其制备方法，该非磁性卡盘具有涂覆的氮化铝（AlN）层作为电介质，具有夹持晶片的晶片的目的。 本发明的静电卡盘通过不用烧结工艺或粘合剂进行烧结工艺或粘接工艺，通过形成作为电介质的AlN层，具有优异的介电特性，结合强度和导热性。