公开(公告)号：US06784465B2

公开(公告)日：2004-08-31

申请号：US10423359

申请日：2003-04-25

Applicant: Mathieu Roy

Inventor： Mathieu Roy

IPC: H01L2974

CPC classification number: H01L29/66295 ,  H01L21/2257 ,  H01L21/761 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0834 ,  H01L29/1016 ,  H01L29/1095 ,  H01L29/66333 ,  H01L29/66393

Abstract: A method for manufacturing a vertical power component on a substrate formed of a lightly-doped silicon wafer, including the steps of boring on the lower surface side of the substrate a succession of holes perpendicular to this surface; diffusing a dopant from the holes, of a second conductivity type opposite to that of the substrate; and boring similar holes on the upper surface side of the substrate to define an isolating wall and diffuse from these holes a dopant of the second conductivity type with a high doping level, the holes corresponding to the isolating wall being sufficiently close for the diffused areas to join laterally and vertically.

Abstract translation: 一种在由轻掺杂硅晶片形成的基板上制造垂直功率分量的方法，包括以下步骤：在所述基板的下表面侧镗孔垂直于该表面的一连串孔; 扩散与孔相反的第二导电类型的掺杂剂; 并且在衬底的上表面侧上钻出类似的孔，以限定隔离壁并且从这些孔扩散具有高掺杂水平的第二导电类型的掺杂剂，对应于隔离壁的孔对于扩散区域是足够接近的 横向和垂直连接。

公开(公告)号：US06579782B2

公开(公告)日：2003-06-17

申请号：US09747757

申请日：2000-12-22

Applicant: Mathieu Roy

Inventor： Mathieu Roy

IPC: H01L2122

CPC classification number: H01L29/66295 ,  H01L21/2257 ,  H01L21/761 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0834 ,  H01L29/1016 ,  H01L29/1095 ,  H01L29/66333 ,  H01L29/66393

Abstract: A method for manufacturing a vertical power component on a substrate formed of a lightly-doped silicon wafer, including the steps of boring on the lower surface side of the substrate a succession of holes perpendicular to this surface; diffusing a dopant from the holes, of a second conductivity type opposite to that of the substrate; and boring similar holes on the upper surface side of the substrate to define an isolating wall and diffuse from these holes a dopant of the second conductivity type with a high doping level, the holes corresponding to the isolating wall being sufficiently close for the diffused areas to join laterally and vertically.