公开(公告)号：US20090023287A1

公开(公告)日：2009-01-22

申请号：US12179838

申请日：2008-07-25

申请人： Hong MA ,  Shi-Jie Bai

发明人： Hong MA ,  Shi-Jie Bai

IPC分类号： H01L21/4763

CPC分类号： H01L21/76802 ,  H01L21/31144 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76813

摘要： An interconnection process is described. A substrate having a conductive region formed therein is provided. A dielectric layer is formed on the substrate. A patterned metal hard mask layer having a trench opening is formed on the dielectric layer. A dielectric hard mask layer is formed conformally on the patterned metal hard mask layer and filled in the trench opening. A photoresist pattern is defined to remove a portion of the dielectric hard mask layer and a portion of the dielectric layer to form a first opening in the dielectric layer. The photoresist pattern is removed. A first etching process is performed using the patterned metal hard mask layer as a mask to form a trench and a second opening extending downward from the first opening in the dielectric layer. The second opening exposes the conductive region. A conductive layer is formed in the trench and the second opening.