公开(公告)号：US20230074777A1

公开(公告)日：2023-03-09

申请号：US17468831

申请日：2021-09-08

Applicant: ABB Schweiz AG

Inventor： Xiaoqing Song ,  Utkarsh Raheja ,  Pietro Cairoli ,  Jing Xu

IPC: H01L29/66 ,  H01L29/20 ,  H01L29/778 ,  H02M1/08

Abstract: An overcurrent fault detector using a High Electron Mobility Transistor (HEMT) operated by a gate driver is disclosed. The overcurrent fault detector includes a band-pass filter and a control circuit. The band-pass filter is configured to receive gate-to-source voltage (VGS) signals of the HEMT and filter the VGS signals to generate a band-limited version of the VGS signals. The control circuit is configured to measure a value of the band-limited version of the VGS signals, determine if the value is greater than a threshold value, and generate a fault signal that disables the gate driver and terminates an overcurrent fault condition in response to determining that the value is greater than the threshold value.

公开(公告)号：US10790819B1

公开(公告)日：2020-09-29

申请号：US16801557

申请日：2020-02-26

Applicant: ABB Schweiz AG

Inventor： Yuzhi Zhang ,  Utkarsh Raheja ,  Pietro Cairoli

IPC: H03K17/08 ,  H03K17/567 ,  H02H3/00 ,  H02H5/00 ,  H03K17/687 ,  H03K17/735

Abstract: Systems, methods, techniques and apparatuses of power switch control are disclosed. One exemplary embodiment is a power switch comprising a thyristor-based branch including a thyristor device; a FET-based branch coupled in parallel with the thyristor-based branch and including a FET device; and a controller. The controller is structured to turn on the FET device, turn on the thyristor device after turning on the FET device based on a thyristor voltage threshold, and update the thyristor voltage threshold based on a voltage measurement corresponding to the thyristor-based branch measured while the thyristor device is turned on.