公开(公告)号：US20220301857A1

公开(公告)日：2022-09-22

申请号：US17697056

申请日：2022-03-17

Applicant: ASM IP Holding B.V.

Inventor： Fei Wang ,  Woo Jung Shin ,  Aditya Walimbe

IPC: H01L21/02 ,  B08B7/00

Abstract: A method of precleaning a substrate includes supporting a substrate with silicon oxide on its surface within a reaction chamber of a semiconductor processing system and flowing a halogen-containing reactant and a hydrogen-containing reactant into the reaction chamber. A first preclean material is formed from the halogen-containing reactant, the hydrogen-containing reactant, and a first portion of the silicon oxide on the surface of the substrate. Additional halogen-containing reactant is flowed into the reaction chamber without flowing additional hydrogen-containing reactant into the reaction chamber, and a second preclean material is formed from the additional halogen-containing reactant and a second portion of the silicon oxide on the surface of the substrate. Methods of forming structures on substrates and semiconductor processing systems are also described.

公开(公告)号：US20220246436A1

公开(公告)日：2022-08-04

申请号：US17718427

申请日：2022-04-12

Applicant: ASM IP Holding B.V.

Inventor： Fei Wang ,  Aditya Walimbe

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/67 ,  H01J37/32

Abstract: An apparatus and methods for selectively etching a particular layer are disclosed. The apparatus and methods are directed towards maintaining the etch rate of the particular layer, while keeping intact a non-etched layer. The etching process may be accomplished by co-flowing a hydrogen precursor gas and a fluorine precursor gas into a remote plasma unit. A resulting gas mixture may then be flowed onto the substrate having a silicon oxide layer as an etch layer and a silicon nitride layer as a non-etched layer, for example. A reaction between the resulting gas mixture and the particular layer takes place, resulting in etching of the silicon oxide layer while maintaining the silicon nitride layer in the above example.

公开(公告)号：US20220384203A1

公开(公告)日：2022-12-01

申请号：US17879418

申请日：2022-08-02

Applicant: ASM IP Holding B.V.

Inventor： Fei Wang ,  Woo Jung Shin

IPC: H01L21/306 ,  H01L21/3065

Abstract: An apparatus and methods for selectively etching a particular layer are disclosed. The apparatus and methods are directed towards maintaining the etch rate of the particular layer, while keeping intact a non-etched layer. A gas mixture may be flowed onto the substrate in separate loops having an oxide layer and an oxynitride layer as an etch layer and a nitride layer as a non-etched layer, for example. A reaction between the resulting gas mixture and the particular layer takes place, resulting in etching of the oxide layer and the oxynitride layer while maintaining the nitride layer in the above example.

公开(公告)号：US11315794B2

公开(公告)日：2022-04-26

申请号：US17070580

申请日：2020-10-14

Applicant: ASM IP Holding B.V.

Inventor： Fei Wang ,  Aditya Walimbe

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/67 ,  H01J37/32

Abstract: An apparatus and methods for selectively etching a particular layer are disclosed. The apparatus and methods are directed towards maintaining the etch rate of the particular layer, while keeping intact a non-etched layer. The etching process may be accomplished by co-flowing a hydrogen precursor gas and a fluorine precursor gas into a remote plasma unit. A resulting gas mixture may then be flowed onto the substrate having a silicon oxide layer as an etch layer and a silicon nitride layer as a non-etched layer, for example. A reaction between the resulting gas mixture and the particular layer takes place, resulting in etching of the silicon oxide layer while maintaining the silicon nitride layer in the above example.