公开(公告)号：US20210225615A1

公开(公告)日：2021-07-22

申请号：US17151219

申请日：2021-01-18

Applicant: ASM IP Holding B.V.

Inventor： Takashi Yoshida

IPC: H01J37/32 ,  H01L21/02

Abstract: A method including: a plasma contact step including supplying treatment gas including a reactant gas into a chamber, activating a reactant component included in the treatment gas by generating plasma from the reactant component by applying high-frequency power, and bringing the treatment gas including the reactant component activated into contact with the surface of the substrate, in which in the plasma contact step, a first plasma generation condition in which stable plasma is generated by applying high-frequency power of a first power level while supplying treatment gas of a first concentration is changed to a second plasma generation condition in which a desired thin film is obtained by performing at least one of increasing the high-frequency power to a second power level and gradually decreasing the treatment gas to a second concentration, and of gradually increasing the high-frequency power to the second power level, and abnormal electrical discharge is suppressed.

公开(公告)号：US10559458B1

公开(公告)日：2020-02-11

申请号：US16200100

申请日：2018-11-26

Applicant: ASM IP Holding B.V.

Inventor： Hidemi Suemori ,  Hiroo Sekiguchi ,  Takashi Yoshida

IPC: C23C16/455 ,  H01L21/02 ,  C23C16/30

Abstract: A method of forming a nitrogen-incorporated silicon or metal oxide film, includes (i) depositing by a plasma a silicon or metal oxide film on a substrate using a precursor containing a silicon or metal and an oxidizing gas, said plasma having a first plasma density; and (ii) nitriding by a plasma the silicon or metal oxide film using a nitriding gas without using any precursor, said plasma having a second plasma density which is higher than the first plasma density.