公开(公告)号：US11156923B2

公开(公告)日：2021-10-26

申请号：US15557802

申请日：2015-12-10

Applicant: ASML Netherlands B.V.

Inventor： Hakki Ergün Cekli ,  Xing Lan Liu ,  Stefan Cornelis Theodorus Van Der Sanden ,  Richard Johannes Franciscus Van Haren

IPC: G03F7/20 ,  G03F9/00

Abstract: A method includes exposing number of fields on a substrate, obtaining data about a field and correcting exposure of the field in subsequent exposures. The method includes defining one or more sub-fields of the field based on the obtained data. Data relating to each sub-field is processed to produce sub-field correction information. A subsequent exposure of the one or more sub-fields is corrected using the sub-field correction information. By controlling a lithographic apparatus by reference to data of a particular sub-field within a field, overlay error can be reduced or minimized for a critical feature, rather than being averaged over the whole field. By controlling a lithographic apparatus with reference to a sub-field rather than only the whole field, a residual error can be reduced in each sub-field.

公开(公告)号：US10437163B2

公开(公告)日：2019-10-08

申请号：US15650401

申请日：2017-07-14

Applicant: ASML Netherlands B.V.

Inventor： Maurits Van Der Schaar ,  Murat Bozkurt ,  Patrick Warnaar ,  Stefan Cornelis Theodorus Van Der Sanden

IPC: G03F9/00 ,  G01N21/956 ,  G03F7/20

Abstract: A method and apparatus are described for providing an accurate and robust measurement of a lithographic characteristic or metrology parameter. The method includes providing a range or a plurality of values for each of a plurality of metrology parameters of a metrology target, providing a constraint for each of the plurality of metrology parameters, and calculating, by a processor to optimize/modify these parameters within the range of the plurality of values, resulting in a plurality of metrology target designs having metrology parameters meeting the constraints.