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公开(公告)号：US10474045B2
公开(公告)日：2019-11-12
申请号：US15737990
申请日：2016-06-28
发明人： Franciscus Godefridus Casper Bijnen , Arie Jeffrey Den Boef , Richard Johannes Franciscus Van Haren , Patricius Aloysius Jacobus Tinnemans , Alexander Ypma , Irina Anatolievna Lyulina , Edo Maria Hulsebos , Hakki Ergün Cekli , Xing Lan Liu , Loek Johannes Petrus Verhees , Victor Emanuel Calado , Leon Paul Van Dijk
摘要： A method of characterizing a deformation of a plurality of substrates is described. The method includes: measuring, for a plurality of n different alignment measurement parameters λ and for a plurality of substrates, a position of the alignment marks; determining a positional deviation as the difference between the n alignment mark position measurements and a nominal alignment mark position; grouping the positional deviations into data sets; determining an average data set; subtracting the average data set from the data sets to obtain a plurality of variable data sets; performing a blind source separation method on the variable data sets, thereby decomposing the variable data sets into a set of eigenwafers representing principal components of the variable data sets; and subdividing the set of eigenwafers into a set of mark deformation eigenwafers and a set of substrate deformation eigenwafers.
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公开(公告)号：US10990018B2
公开(公告)日：2021-04-27
申请号：US16481143
申请日：2018-02-12
发明人： Wim Tjibbo Tel , Bart Peter Bert Segers , Everhardus Cornelis Mos , Emil Peter Schmitt-Weaver , Yichen Zhang , Petrus Gerardus Van Rhee , Xing Lan Liu , Maria Kilitziraki , Reiner Maria Jungblut , Hyunwoo Yu
摘要： A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.
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公开(公告)号：US10545410B2
公开(公告)日：2020-01-28
申请号：US16076743
申请日：2017-02-07
发明人： Hakki Ergun Cekli , Masashi Ishibashi , Leon Paul Van Dijk , Richard Johannes Franciscus Van Haren , Xing Lan Liu , Reiner Maria Jungblut , Cedric Marc Affentauschegg , Ronald Henricus Johannes Otten
摘要： A lithographic process includes clamping a substrate onto a substrate support, measuring positions across the clamped substrate, and applying a pattern to the clamped substrate using the positions measured. A correction is applied to the positioning of the applied pattern in localized regions of the substrate, based on recognition of a warp-induced characteristic in the positions measured across the substrate. The correction may be generated by inferring one or more shape characteristics of the warped substrate using the measured positions and other information. Based on the one or more inferred shape characteristics, a clamping model is applied to simulate deformation of the warped substrate in response to clamping. A correction is calculated based on the simulated deformation.
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公开(公告)号：US10331043B2
公开(公告)日：2019-06-25
申请号：US15118440
申请日：2015-01-29
发明人： Henricus Wilhelmus Maria Van Buel , Johannes Marcus Maria Beltman , Xing Lan Liu , Hendrik Jan Hidde Smilde , Richard Johannes Franciscus Van Haren
IPC分类号： G03F7/20 , G01N21/93 , G01N21/956
摘要： A method of devising a target arrangement, and associated target and reticle. The target includes a plurality of gratings, each grating having a plurality of substructures. The method includes: defining a target area; locating the substructures within the target area so as to form the gratings; and locating assist features at the periphery of the gratings, the assist features being configured to reduce measured intensity peaks at the periphery of the gratings. The method may include an optimization process including modelling a resultant image obtained by inspection of the target using a metrology process; and evaluating whether the target arrangement is optimized for detection using a metrology process.
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公开(公告)号：US11347150B2
公开(公告)日：2022-05-31
申请号：US17197167
申请日：2021-03-10
发明人： Wim Tjibbo Tel , Bart Peter Bert Segers , Everhardus Cornelis Mos , Emil Peter Schmitt-Weaver , Yichen Zhang , Petrus Gerardus Van Rhee , Xing Lan Liu , Maria Kilitziraki , Reiner Maria Jungblut , Hyunwoo Yu
摘要： A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.
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公开(公告)号：US10788761B2
公开(公告)日：2020-09-29
申请号：US16344831
申请日：2017-10-17
发明人： Leon Paul Van Dijk , Victor Emanuel Calado , Xing Lan Liu , Richard Johannes Franciscus Van Haren
摘要： A method of determining an optimal operational parameter setting of a metrology system is described. Free-form substrate shape measurements are performed. A model is applied, transforming the measured warp to modeled warp scaling values. Substrates are clamped to a chuck, causing substrate deformation. Alignment marks of the substrates are measured using an alignment system with four alignment measurement colors. Scaling values thus obtained are corrected with the modeled warp scaling values to determine corrected scaling values. An optimal alignment measurement color is determined, based on the corrected scaling values. Optionally, scaling values are selected that were measured using the optimal alignment measurement color and a substrate grid is determined using the selected scaling values. A substrate may be exposed using the determined substrate grid to correct exposure of the substrate.
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公开(公告)号：US10386176B2
公开(公告)日：2019-08-20
申请号：US14835504
申请日：2015-08-25
发明人： Kaustuve Bhattacharyya , Henricus Wilhelmus Maria Van Buel , Christophe David Fouquet , Hendrik Jan Hidde Smilde , Maurits Van Der Schaar , Arie Jeffrey Den Boef , Richard Johannes Franciscus Van Haren , Xing Lan Liu , Johannes Marcus Maria Beltman , Andreas Fuchs , Omer Abubaker Omer Adam , Michael Kubis , Martin Jacobus Johan Jak
摘要： A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.
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公开(公告)号：US20160061589A1
公开(公告)日：2016-03-03
申请号：US14835504
申请日：2015-08-25
发明人： Kaustuve BHATTACHARYYA , Henricus Wilhelmus Maria Van Buel , Christophe David Fouquet , Hendrik Jan Hidde Smilde , Maurits Van Der Schaar , Arie Jeffrey Den Boef , Richard Johannes Franciscus Van Haren , Xing Lan Liu , Johannes Marcus Maria Beltman , Andreas Fuchs , Omer Abubaker Omer Adam , Michael Kubis , Martin Jacobus Johan Jak
IPC分类号： G01B11/14
CPC分类号： G01B11/14 , G03F7/70633 , G03F7/70683
摘要： A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.
摘要翻译： 具有至少第一子目标和至少第二子目标的衍射测量目标，并且其中（1）所述第一和第二子目标各自包括一对周期性结构，并且所述第一子目标具有不同的 设计比第二子目标，不同的设计包括具有与第二子目标周期结构不同的间距，特征宽度，空间宽度和/或分割的第一子目标周期性结构，或（2）第一和第二子目标周期结构 子目标分别包括第一层中的第一和第二周期性结构，并且第三周期性结构至少部分地位于第一层下面的第二层中的第一周期性结构下方，并且在第二层周期结构之下不存在周期性结构 并且第四周期性结构至少部分地位于第二层下面的第三层中的第二周期性结构下方。
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公开(公告)号：US11493851B2
公开(公告)日：2022-11-08
申请号：US17482630
申请日：2021-09-23
发明人： Hakki Ergün Cekli , Xing Lan Liu , Stefan Cornelis Theodorus Van Der Sanden , Richard Johannes Franciscus Van Haren
摘要： A method includes exposing number of fields on a substrate, obtaining data about a field and correcting exposure of the field in subsequent exposures. The method includes defining one or more sub-fields of the field based on the obtained data. Data relating to each sub-field is processed to produce sub-field correction information. A subsequent exposure of the one or more sub-fields is corrected using the sub-field correction information. By controlling a lithographic apparatus by reference to data of a particular sub-field within a field, overlay error can be reduced or minimized for a critical feature, rather than being averaged over the whole field. By controlling a lithographic apparatus with reference to a sub-field rather than only the whole field, a residual error can be reduced in each sub-field.
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公开(公告)号：US11187995B2
公开(公告)日：2021-11-30
申请号：US16346135
申请日：2017-11-01
发明人： Victor Emanuel Calado , Youping Zhang , Maurits Van Der Schaar , Richard Johannes Franciscus Van Haren , Xing Lan Liu
IPC分类号： G03F7/20
摘要： A method of measuring a parameter of a patterning process, the method including obtaining a measurement of a substrate processed by a patterning process, with a first metrology target measurement recipe; obtaining a measurement of the substrate with a second, different metrology target measurement recipe, wherein measurements using the first and second metrology target measurement recipes have their own distinct sensitivity to a metrology target structural asymmetry of the patterning process; and determining a value of the parameter by a weighted combination of the measurements of the substrate using the first and second metrology target measurement recipes, wherein the weighting reduces or eliminates the effect of the metrology target structural geometric asymmetry on the parameter of the patterning process determined from the measurements using the first and second metrology target measurement recipes.
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