公开(公告)号：US20070059921A1

公开(公告)日：2007-03-15

申请号：US11223367

申请日：2005-09-09

申请人： Gregory Cestra ,  Michael Dunbar

发明人： Gregory Cestra ,  Michael Dunbar

IPC分类号： H01L21/4763 ,  H01L21/44

CPC分类号： H01L21/76838

摘要： A semiconductor device interconnection contact and fabrication method comprises fabricating one or more active devices on a semiconductor substrate. A diffusion barrier layer is deposited over the devices, followed by an Al-based metallization layer. The diffusion barrier and metallization layers are masked and etched to define interconnection traces. Mask and etch steps are then performed to remove interconnection trace metallization that is in close proximity to the active device regions, while leaving the traces' diffusion barrier layer intact to provide conductive paths to the devices, thereby reducing metallization-induced mechanical stress which might otherwise cause device instability.

摘要翻译： 半导体器件互连接触和制造方法包括在半导体衬底上制造一个或多个有源器件。 扩散阻挡层沉积在器件上，随后沉积Al基金属化层。 扩散阻挡层和金属化层被掩蔽和蚀刻以限定互连迹线。 然后执行掩模和蚀刻步骤以去除紧邻有源器件区域的互连迹线金属化，同时留下迹线的扩散阻挡层完整以提供到器件的导电路径，从而减少金属化引起的机械应力，否则可能会导致 导致设备不稳定。