LIGHT SENSORS WITH INFRARED SUPPRESSION
    1.
    发明申请
    LIGHT SENSORS WITH INFRARED SUPPRESSION 失效
    具有红外抑制的光传感器

    公开(公告)号:US20080135968A1

    公开(公告)日:2008-06-12

    申请号:US11621443

    申请日:2007-01-09

    IPC分类号: H01L31/02

    摘要: Embodiments of the present invention are directed to light sensors, that primarily respond to visible light while suppressing infrared light. Such sensors are especially useful as ambient light sensors because such sensors can be used to provide a spectral response similar to that of a human eye. Embodiments of the present invention are also directed to methods of providing such light sensors, and methods for using such light sensors.

    摘要翻译: 本发明的实施例涉及在抑制红外光的同时主要响应于可见光的光传感器。 这种传感器作为环境光传感器是特别有用的,因为这样的传感器可用于提供类似于人眼的光谱响应。 本发明的实施例还涉及提供这种光传感器的方法,以及使用这种光传感器的方法。

    Light sensors with infrared suppression
    2.
    发明授权
    Light sensors with infrared suppression 有权
    红外线抑制光传感器

    公开(公告)号:US07960766B2

    公开(公告)日:2011-06-14

    申请号:US12817101

    申请日:2010-06-16

    IPC分类号: H01L31/062

    摘要: Embodiments of the present invention are directed to light sensors, that primarily respond to visible light while suppressing infrared light. Such sensors are especially useful as ambient light sensors because such sensors can be used to provide a spectral response similar to that of a human eye. Embodiments of the present invention are also directed to methods of providing such light sensors, and methods for using such light sensors.

    摘要翻译: 本发明的实施例涉及在抑制红外光的同时主要响应于可见光的光传感器。 这种传感器作为环境光传感器是特别有用的,因为这样的传感器可用于提供类似于人眼的光谱响应。 本发明的实施例还涉及提供这种光传感器的方法,以及使用这种光传感器的方法。

    High resistivity thin film composition and fabrication method
    3.
    发明授权
    High resistivity thin film composition and fabrication method 有权
    高电阻薄膜组成及制备方法

    公开(公告)号:US07609144B2

    公开(公告)日:2009-10-27

    申请号:US11608668

    申请日:2006-12-08

    IPC分类号: H01C1/012

    CPC分类号: H01C7/006 Y10T29/49082

    摘要: A thin film composition is made from silicon, an insulator such as alumina or silicon dioxide, and at least one additional material such as chromium, nickel, boron and/or carbon. These materials are combined to provide a thin film having a ρ of at least 0.02 Ω-cm (typically 0.02-1.0 Ω-cm), and a TCR of less than ±1000 ppm/° C. (typically less than ±300 ppm/° C.). A sheet resistance of at least 20 kΩ/□ may also be obtained. The resulting thin film is preferably at least 200 thick, to reduce surface scattering conduction currents.

    摘要翻译: 薄膜组合物由硅,诸如氧化铝或二氧化硅的绝缘体和至少一种另外的材料如铬,镍,硼和/或碳制成。 将这些材料组合以提供具有至少0.02Ω·cm(通常为0.02-1.0Ω·cm)的rho和小于±1000ppm /℃(通常小于±300ppm /℃)的TCR的薄膜, C。)。 也可以获得至少20kOmega /□的薄层电阻。 所得薄膜优选为至少200 厚,以减少表面散射传导电流。

    HIGH RESISTIVITY THIN FILM COMPOSITION AND FABRICATION METHOD
    4.
    发明申请
    HIGH RESISTIVITY THIN FILM COMPOSITION AND FABRICATION METHOD 有权
    高电阻薄膜组合物和制造方法

    公开(公告)号:US20080136579A1

    公开(公告)日:2008-06-12

    申请号:US11608668

    申请日:2006-12-08

    IPC分类号: H01C1/012 H01C17/06 B05D5/12

    CPC分类号: H01C7/006 Y10T29/49082

    摘要: A thin film composition is made from silicon, an insulator such as alumina or silicon dioxide, and at least one additional material such as chromium, nickel, boron and/or carbon. These materials are combined to provide a thin film having a ρ of at least 0.02 Ω-cm (typically 0.02-1.0 Ω-cm), and a TCR of less than ±1000 ppm/° C. (typically less than ±300 ppm/° C.). A sheet resistance of at least 20 kΩ/□ may also be obtained. The resulting thin film is preferably at least 200 Å thick, to reduce surface scattering conduction currents.

    摘要翻译: 薄膜组合物由硅,诸如氧化铝或二氧化硅的绝缘体和至少一种另外的材料如铬,镍,硼和/或碳制成。 将这些材料组合以提供具有至少0.02Ω·cm(通常为0.02-1.0Ω·cm)的rho和小于±1000ppm /℃(通常小于±300ppm /℃)的TCR的薄膜, C。)。 也可以获得至少20kOmega /□的薄层电阻。 所得薄膜优选至少为200埃,以减少表面散射传导电流。

    Light sensors with infrared suppression
    7.
    发明授权
    Light sensors with infrared suppression 失效
    红外线抑制光传感器

    公开(公告)号:US07755117B2

    公开(公告)日:2010-07-13

    申请号:US11621443

    申请日:2007-01-09

    IPC分类号: H01L31/062

    摘要: Embodiments of the present invention are directed to light sensors, that primarily respond to visible light while suppressing infrared light. Such sensors are especially useful as ambient light sensors because such sensors can be used to provide a spectral response similar to that of a human eye. Embodiments of the present invention are also directed to methods of providing such light sensors, and methods for using such light sensors.

    摘要翻译: 本发明的实施例涉及在抑制红外光的同时主要响应于可见光的光传感器。 这种传感器作为环境光传感器是特别有用的,因为这样的传感器可用于提供类似于人眼的光谱响应。 本发明的实施例还涉及提供这种光传感器的方法,以及使用这种光传感器的方法。

    Semiconductor device interconnection contact and fabrication method
    8.
    发明申请
    Semiconductor device interconnection contact and fabrication method 有权
    半导体器件互连接触和制造方法

    公开(公告)号:US20070059921A1

    公开(公告)日:2007-03-15

    申请号:US11223367

    申请日:2005-09-09

    IPC分类号: H01L21/4763 H01L21/44

    CPC分类号: H01L21/76838

    摘要: A semiconductor device interconnection contact and fabrication method comprises fabricating one or more active devices on a semiconductor substrate. A diffusion barrier layer is deposited over the devices, followed by an Al-based metallization layer. The diffusion barrier and metallization layers are masked and etched to define interconnection traces. Mask and etch steps are then performed to remove interconnection trace metallization that is in close proximity to the active device regions, while leaving the traces' diffusion barrier layer intact to provide conductive paths to the devices, thereby reducing metallization-induced mechanical stress which might otherwise cause device instability.

    摘要翻译: 半导体器件互连接触和制造方法包括在半导体衬底上制造一个或多个有源器件。 扩散阻挡层沉积在器件上,随后沉积Al基金属化层。 扩散阻挡层和金属化层被掩蔽和蚀刻以限定互连迹线。 然后执行掩模和蚀刻步骤以去除紧邻有源器件区域的互连迹线金属化,同时留下迹线的扩散阻挡层完整以提供到器件的导电路径,从而减少金属化引起的机械应力,否则可能会导致 导致设备不稳定。

    Light sensors with infrared suppression
    9.
    发明授权
    Light sensors with infrared suppression 有权
    红外线抑制光传感器

    公开(公告)号:US08309994B2

    公开(公告)日:2012-11-13

    申请号:US13101667

    申请日:2011-05-05

    IPC分类号: H01L31/062

    摘要: Embodiments of the present invention are directed to light sensors that primarily respond to visible light while suppressing infrared light. Such sensors are especially useful as ambient light sensors because such sensors can be used to provide a spectral response similar to that of a human eye. Embodiments of the present invention are also directed to methods of providing such light sensors, and methods for using such light sensors.

    摘要翻译: 本发明的实施例涉及在抑制红外光的同时主要响应于可见光的光传感器。 这种传感器作为环境光传感器是特别有用的,因为这样的传感器可用于提供类似于人眼的光谱响应。 本发明的实施例还涉及提供这种光传感器的方法,以及使用这种光传感器的方法。

    LIGHT SENSORS WITH INFRARED SUPPRESSION
    10.
    发明申请
    LIGHT SENSORS WITH INFRARED SUPPRESSION 有权
    具有红外抑制的光传感器

    公开(公告)号:US20110204237A1

    公开(公告)日:2011-08-25

    申请号:US13101667

    申请日:2011-05-05

    IPC分类号: G01J5/02 H01L27/146

    摘要: Embodiments of the present invention are directed to light sensors that primarily respond to visible light while suppressing infrared light. Such sensors are especially useful as ambient light sensors because such sensors can be used to provide a spectral response similar to that of a human eye. Embodiments of the present invention are also directed to methods of providing such light sensors, and methods for using such light sensors.

    摘要翻译: 本发明的实施例涉及在抑制红外光的同时主要响应于可见光的光传感器。 这种传感器作为环境光传感器是特别有用的,因为这样的传感器可用于提供类似于人眼的光谱响应。 本发明的实施例还涉及提供这种光传感器的方法,以及使用这种光传感器的方法。