公开(公告)号：US09293500B2

公开(公告)日：2016-03-22

申请号：US13782532

申请日：2013-03-01

Applicant: Apple Inc.

Inventor： Anup K. Sharma ,  Xiaofeng Fan ,  Xiangli Li ,  Chung Chun Wan ,  Chiajen Lee ,  Terry L. Gilton

IPC: H04N5/235 ,  G03B7/00 ,  H01L27/146 ,  H04N5/355 ,  H04N5/359 ,  H04N5/3745

CPC classification number: H01L27/14641 ,  H04N5/35536 ,  H04N5/3591 ,  H04N5/37452

Abstract: A method of operating an image sensor. Charge accumulated in a photodiode during a first sub-exposure may be selectively stored in a storage node responsive to a first control signal. Charge accumulated in the photodiode during a first reset period may be selectively discarded responsive to a second control signal. Charge accumulated in the photodiode during a second sub-exposure may be selectively stored responsive to the first control signal. Charge stored in the storage node from the first and second sub-exposures may be transferred to a floating diffusion node responsive to a third control signal.

Abstract translation: 一种操作图像传感器的方法。 在第一次曝光期间累积在光电二极管中的电荷可以响应于第一控制信号被选择性地存储在存储节点中。 响应于第二控制信号，可以选择性地丢弃在第一复位周期期间在光电二极管中累积的电荷。 可以响应于第一控制信号选择性地存储在第二副曝光期间在光电二极管中累积的电荷。 响应于第三控制信号，可以将存储在第一和第二子曝光中的存储节点中的电荷传送到浮动扩散节点。

公开(公告)号：US09276031B2

公开(公告)日：2016-03-01

申请号：US13783536

申请日：2013-03-04

Applicant: Apple Inc.

Inventor： Chung Chun Wan

IPC: H01L27/00 ,  H01L27/146

CPC classification number: H01L27/14643 ,  G06F3/044 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14623 ,  H01L27/1464 ,  H04N5/2253

Abstract: An image sensor pixel is disclosed. The pixel may include a photodiode having a first region with a first potential and a second region with a second, higher potential, with the second region being offset in depth from the first region in a semiconductor chip. A storage node may be positioned at substantially the same depth as the second region of the photodiode. A storage gate may be operable to transfer charge between the photodiode and the storage node.

Abstract translation: 公开了一种图像传感器像素。 像素可以包括具有第一电位的第一区域和具有第二较高电位的第二区域的光电二极管，其中第二区域在半导体芯片中与第一区域深度偏移。 存储节点可以位于与光电二极管的第二区域基本相同的深度处。 存储门可以可操作以在光电二极管和存储节点之间传送电荷。

公开(公告)号：US20140252201A1

公开(公告)日：2014-09-11

申请号：US13787094

申请日：2013-03-06

Applicant: APPLE INC.

Inventor： Xiangli Li ,  Xiaofeng Fan ,  Chung Chun Wan

IPC: H04N5/378

CPC classification number: H01L27/14609 ,  H01L27/14616 ,  H04N5/35572 ,  H04N5/37452 ,  H04N5/378

Abstract: Apparatuses and methods for charge transfer in image sensors are disclosed. One example of an image sensor pixel may include a first charge storage node and a second charge storage node. A transfer circuit may be coupled between the first and second charge storage nodes, and the transfer circuit may have a first region proximate the first charge storage node and configured to have a first potential. The transfer circuit may also have a second region proximate the second charge storage node configured to have a second, higher potential. An input node may be configured to control the first and second potentials based on a transfer signal provided to the input node.

Abstract translation: 公开了用于图像传感器中的电荷转移的装置和方法。 图像传感器像素的一个示例可以包括第一电荷存储节点和第二电荷存储节点。 传输电路可以耦合在第一和第二电荷存储节点之间，并且传输电路可以具有靠近第一电荷存储节点的第一区域并且被配置为具有第一电位。 转移电路还可以具有靠近第二电荷存储节点的第二区域，被配置为具有第二较高电位。 输入节点可以被配置为基于提供给输入节点的传送信号来控制第一和第二电位。

公开(公告)号：US20170373106A1

公开(公告)日：2017-12-28

申请号：US15682255

申请日：2017-08-21

Applicant: Apple Inc.

Inventor： Xiangli Li ,  Xiaofeng Fan ,  Chung Chun Wan

IPC: H01L27/146 ,  H04N5/355 ,  H04N5/3745 ,  H04N5/378

CPC classification number: H01L27/14609 ,  H01L27/14616 ,  H04N5/35572 ,  H04N5/37452 ,  H04N5/378 ,  H04N5/379

Abstract: Apparatuses and methods for charge transfer in image sensors are disclosed. One example of an image sensor pixel may include a first charge storage node and a second charge storage node. A transfer circuit may be coupled between the first and second charge storage nodes, and the transfer circuit may have a first region proximate the first charge storage node and configured to have a first potential. The transfer circuit may also have a second region proximate the second charge storage node configured to have a second, higher potential. An input node may be configured to control the first and second potentials based on a transfer signal provided to the input node.