公开(公告)号：US20210265416A1

公开(公告)日：2021-08-26

申请号：US16797807

申请日：2020-02-21

Applicant: Applied Materials, Inc.

Inventor： Papo CHEN ,  Schubert CHU ,  Errol Antonio C SANCHEZ ,  John Timothy BOLAND ,  Zhiyuan YE ,  Lori WASHINGTON ,  Xianzhi TAO ,  Yi-Chiau HUANG ,  Chen-Ying WU

IPC: H01L27/146 ,  H01L31/18

Abstract: A method of fabricating a semiconductor device includes forming an interconnect structure over a front side of a sensor substrate, thinning the sensor substrate from a back side of the sensor substrate, etching trenches into the sensor substrate, pre-cleaning an exposed surface of the sensor substrate, epitaxially growing a charge layer directly on the pre-cleaned exposed surface of the sensor substrate, and forming isolation structures within the etched trenches.