公开(公告)号：US20200083047A1

公开(公告)日：2020-03-12

申请号：US16687529

申请日：2019-11-18

Applicant: Applied Materials, Inc.

Inventor： Min Gyu SUNG ,  Sony VARGHESE

IPC: H01L21/033

Abstract: The present disclosure relates to a method for creating regions of different device types. The substrate is divided into a first device region and a second device region. A target etch layer is formed on a substrate. A bottom mandrel layer is formed on the target etch layer. A plurality of first pillars of a top mandrel material is formed on the bottom mandrel layer in the first device region, having a first pitch. A plurality of first spacers is formed along sidewalls of each of the plurality of first pillars. An optical planarization layer (OPL) is formed over the plurality of first pillars, the plurality of first spacers, and a top surface of the bottom mandrel layer in the first device region. A plurality of second pillars of the top mandrel material is formed on the bottom mandrel layer in the second device region, having a second pitch.

公开(公告)号：US20190378717A1

公开(公告)日：2019-12-12

申请号：US16003902

申请日：2018-06-08

Applicant: Applied Materials, Inc.

Inventor： Min Gyu SUNG ,  Sony VARGHESE

IPC: H01L21/033

Abstract: The present disclosure relates to a method for creating regions of different device types on a substrate having different pitches. The method includes dividing a substrate into a first device type region and a second device type region. The method further includes forming a target etch layer on the substrate. The method further includes forming a bottom mandrel layer on the target etch layer. The method further includes forming a plurality of alternating first pillars of a top mandrel material and first trenches between the first pillars on the bottom mandrel layer in the first device type region. The plurality of first pillars has a first pitch. The method further includes forming a plurality of alternating second pillars of the top mandrel material and second trenches between the second pillars on the bottom mandrel layer in the second device type region. The plurality of second pillars has a second pitch. The method further includes depositing tone inversion material in the first trenches.