公开(公告)号：US20160035634A1

公开(公告)日：2016-02-04

申请号：US14422364

申请日：2014-05-07

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hui TIAN ,  Lujiang HUANGFU

IPC: H01L21/66 ,  H01J37/317 ,  H01L21/265

CPC classification number: H01L22/20 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/04756 ,  H01J2237/24542 ,  H01L21/265

Abstract: The present invention provides an improved ion implantation method and an ion implantation apparatus for performing the improved ion implantation method, belongs to the field of ion implantation technology, which can solve the problem of the poor stability and uniformity of the ion beam of the existing ion implantation apparatus. The improved ion implantation method of the invention comprises steps of: step S1, detecting beam flow densities and beam flow distribution nonuniformities under various decelerating voltages; step S2, determining an operation decelerating voltage based on the beam flow densities and the beam flow distribution nonuniformities; and step S3, performing an ion implantation under the determined operation decelerating voltage. The present invention ensures the uniformity and stability of the ion beam, and thus ensures the uniformity of performances of the processed base materials in each batch or among various batches.

Abstract translation: 本发明提供了一种改进的离子注入方法和离子注入装置，用于执行改进的离子注入方法，属于离子注入技术领域，其可以解决现有离子的离子束的稳定性和均匀性差的问题 植入装置。 本发明改进的离子注入方法包括以下步骤：步骤S1，检测各种减速电压下的束流密度和束流分布不均匀性; 步骤S2，基于束流密度和束流分布不均匀性确定操作减速电压; 和步骤S3，在所确定的运行减速电压下进行离子注入。 本发明确保了离子束的均匀性和稳定性，从而确保了每批或多个批次中经处理的基材的性能的均匀性。