公开(公告)号：US20190139740A1

公开(公告)日：2019-05-09

申请号：US15803344

申请日：2017-11-03

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Eric D. Wilson ,  George M. Gammel ,  Sruthi Chennadi ,  Daniel Tieger ,  Shane Conley

IPC: H01J37/317 ,  H01J37/244

CPC classification number: H01J37/3171 ,  H01J37/244 ,  H01J2237/24405 ,  H01J2237/24535 ,  H01J2237/24542 ,  H01J2237/30477 ,  H01J2237/31703

Abstract: An apparatus for monitoring of an ion beam. The apparatus may include a processor; and a memory unit coupled to the processor, including a display routine, where the display routine operative on the processor to manage monitoring of the ion beam. The display routine may include a measurement processor to receive a plurality of spot beam profiles of the ion beam, the spot beam profiles collected during a fast scan of the ion beam and a slow mechanical scan of a detector, conducted simultaneously with the fast scan. The fast scan may comprise a plurality of scan cycles having a frequency of 10 Hz or greater along a fast scan direction, and the slow mechanical scan being performed in a direction parallel to the fast scan direction. The measurement processor may also send a display signal to display at least one set of information, derived from the plurality of spot beam profiles.

公开(公告)号：US10037866B2

公开(公告)日：2018-07-31

申请号：US15217460

申请日：2016-07-22

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Momoyo Enyama ,  Muneyuki Fukuda ,  Hideyuki Kazumi ,  Koichi Hamada ,  Sayaka Tanimoto

IPC: H01J37/26 ,  H01J37/22

CPC classification number: H01J37/265 ,  H01J37/153 ,  H01J37/21 ,  H01J37/222 ,  H01J37/226 ,  H01J2237/049 ,  H01J2237/103 ,  H01J2237/1534 ,  H01J2237/223 ,  H01J2237/24542 ,  H01J2237/24592 ,  H01J2237/2801

Abstract: A charged particle beam apparatus with improved depth of focus and maintained/improved resolution has a charged particle source, an off-axis illumination aperture, a lens, a computer, and a memory unit. The apparatus acquires an image by detecting a signal generated by irradiating a sample with a charged particle beam caused from the charged particle source via the off-axis illumination aperture. The computer has a beam-computing-process unit to estimate a beam profile of the charged particle beam and an image-sharpening-process unit to sharpen the image using the estimated beam profile.

公开(公告)号：US09733366B2

公开(公告)日：2017-08-15

申请号：US14397478

申请日：2013-04-16

Applicant: INDIAN INSTITUTE OF TECHNOLOGY KANPUR

Inventor： Sudeep Bhattacharjee ,  Samit Paul

IPC: G01T1/29 ,  H01J37/244 ,  H01J37/30

CPC classification number: G01T1/2921 ,  H01J37/244 ,  H01J37/30 ,  H01J2237/24542

Abstract: An apparatus for characterizing a focused charged beam is provided. The apparatus includes a plurality of parallel conducting channels and at least one current sensing unit configured to measure current across each of the plurality of parallel conducting channels.

公开(公告)号：US09455123B2

公开(公告)日：2016-09-27

申请号：US14199110

申请日：2014-03-06

Applicant: NuFlare Technology, Inc.

Inventor： Kenichi Saito

IPC: H01J3/14 ,  H01J37/317 ,  H01J37/06 ,  H01J37/304

CPC classification number: H01J37/3177 ,  H01J37/06 ,  H01J37/304 ,  H01J2237/06308 ,  H01J2237/0653 ,  H01J2237/24535 ,  H01J2237/24542 ,  H01J2237/30477

Abstract: A current regulation method of multiple beams includes acquiring a current density distribution; selecting at least one beam whose current density is equal to or more than a threshold; measuring a current value of the at least one beam respectively by varying a voltage applied to the Wehnelt electrode and acquiring a correlation between the voltage and the current value; moving a stage to a position where the at least one beam is allowed to enter a current detector each time writing of a stripe region is completed; measuring, after moving the stage, a current value of the at least one beam while beams of the multiple beams whose current density is less than the threshold are blocked; operating a target voltage value applied to the Wehnelt electrode to cause the current value measured to be a target current value; and applying the target voltage value to the Wehnelt electrode.

Abstract translation: 多光束的电流调节方法包括获取电流密度分布; 选择电流密度等于或大于阈值的至少一个光束; 通过改变施加到Wehnelt电极的电压并获得电压和电流值之间的相关性，分别测量至少一个光束的电流值; 每次完成条纹区域的写入时，将舞台移动到允许至少一个光束进入电流检测器的位置; 在移动所述台后，测量所述至少一个光束的电流值，同时阻止所述多个光束的电流密度小于所述阈值的光束; 操作施加到所述Wehnelt电极的目标电压值，以将所测量的电流值作为目标电流值; 并将目标电压值施加到Wehnelt电极。

公开(公告)号：US09218938B2

公开(公告)日：2015-12-22

申请号：US14317650

申请日：2014-06-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Nai-Han Cheng

IPC: H01J37/244 ,  H01J37/317

CPC classification number: H01J37/244 ,  H01J37/3171 ,  H01J2237/024 ,  H01J2237/24405 ,  H01J2237/24528 ,  H01J2237/24542

Abstract: A beam monitoring device, method, and system is disclosed. An exemplary beam monitoring device includes a one dimensional (1D) profiler. The 1D profiler includes a Faraday having an insulation material and a conductive material. The beam monitoring device further includes a two dimensional (2D) profiler. The 2D profiler includes a plurality of Faraday having an insulation material and a conductive material. The plurality of Faraday of the 2D profiler are arranged in a pattern that is offset in a direction. The 1D profiler is coupled to a first end of the 2D profiler and extends beyond two adjacent outer edges of the 2D profiler. The beam monitoring device further includes a control arm. The control arm is operable to facilitate movement of the beam monitoring device in the direction.

Abstract translation: 公开了一种光束监测装置，方法和系统。 示例性束监测装置包括一维（1D）轮廓仪。 1D轮廓仪包括具有绝缘材料和导电材料的法拉第。 光束监测装置还包括二维（2D）轮廓仪。 2D轮廓仪包括具有绝缘材料和导电材料的多个法拉第。 2D轮廓仪的多个法拉第以一个方向偏移的图案排列。 1D轮廓仪耦合到2D轮廓仪的第一端并延伸超过2D轮廓仪的两个相邻的外边缘。 光束监视装置还包括控制臂。 控制臂可操作以便于沿着该方向的光束监视装置的移动。

公开(公告)号：US09105448B2

公开(公告)日：2015-08-11

申请号：US14305905

申请日：2014-06-16

Applicant: Lawrence Livermore National Security, LLC

Inventor： John W. Elmer ,  Alan T. Teruya

IPC: H01J37/244 ,  G01T1/29 ,  H01J37/315

CPC classification number: H01J37/244 ,  G01T1/2914 ,  H01J37/315 ,  H01J2237/24405 ,  H01J2237/24542 ,  H01J2237/28 ,  H01J2237/30472

Abstract: A system for analyzing an electron beam including a circular electron beam diagnostic sensor adapted to receive the electron beam, the circular electron beam diagnostic sensor having a central axis; an annular sensor structure operatively connected to the circular electron beam diagnostic sensor, wherein the sensor structure receives the electron beam; a system for sweeping the electron beam radially outward from the central axis of the circular electron beam diagnostic sensor to the annular sensor structure wherein the electron beam is intercepted by the annular sensor structure; and a device for measuring the electron beam that is intercepted by the annular sensor structure.

Abstract translation: 一种用于分析包括适于接收电子束的圆形电子束诊断传感器的电子束的系统，所述圆形电子束诊断传感器具有中心轴线; 环形传感器结构可操作地连接到圆形电子束诊断传感器，其中传感器结构接收电子束; 用于将电子束从圆形电子束诊断传感器的中心轴径向向外扫描到环形传感器结构的系统，其中电子束被环形传感器结构拦截; 以及用于测量被环形传感器结构拦截的电子束的装置。

公开(公告)号：US09057129B2

公开(公告)日：2015-06-16

申请号：US14183320

申请日：2014-02-18

Applicant: Advanced Ion Beam Technology., Inc.

Inventor： Zhimin Wan ,  John D. Pollock ,  Donald Wayne Berrian ,  Causon Ko-Chuan Jen

IPC: C23C14/48 ,  H01J37/09 ,  H01J37/317

CPC classification number: C23C14/48 ,  H01J37/09 ,  H01J37/3171 ,  H01J2237/0455 ,  H01J2237/24542 ,  H01J2237/31711

Abstract: A variable aperture within an aperture device is used to shape the ion beam before the substrate is implanted by shaped ion beam, especially to finally shape the ion beam in a position right in front of the substrate. Hence, different portions of a substrate, or different substrates, can be implanted respectively by different shaped ion beams without going through using multiple fixed apertures or retuning the ion beam each time. In other words, different implantations may be achieved respectively by customized ion beams without high cost (use multiple fixed aperture devices) and complex operation (retuning the ion beam each time). Moreover, the beam tune process for acquiring a specific ion beam to be implanted may be accelerated, to be faster than using multiple fixed aperture(s) and/or retuning the ion beam each time, because the adjustment of the variable aperture may be achieved simply by mechanical operation.

Abstract translation: 在通过成形离子束注入衬底之前，使用孔装置内的可变孔径来形成离子束，特别是最终在离开衬底前方的位置形成离子束。 因此，可以通过不同的成形离子束分别注入衬底或不同衬底的不同部分，而不需要通过使用多个固定孔或每次重新调整离子束。 换句话说，可以通过定制的离子束分别实现不同的注入，而不需要高成本（使用多个固定孔径器件）和复杂的操作（每次重新调整离子束）。 此外，可以加速用于获取要注入的特定离子束的光束调整过程，以便每次都比使用多个固定孔径和/或重新调整离子束更快，因为可以实现可变孔径的调节 简单地通过机械操作。

公开(公告)号：US08766207B2

公开(公告)日：2014-07-01

申请号：US13241392

申请日：2011-09-23

Applicant: Chih-Hong Hwang ,  Chun-Lin Chang ,  Nai-Han Cheng ,  Chi-Ming Yang ,  Chin-Hsiang Lin

Inventor： Chih-Hong Hwang ,  Chun-Lin Chang ,  Nai-Han Cheng ,  Chi-Ming Yang ,  Chin-Hsiang Lin

IPC: H01J37/244

CPC classification number: H01J37/244 ,  H01J37/3171 ,  H01J2237/024 ,  H01J2237/24405 ,  H01J2237/24528 ,  H01J2237/24542

Abstract: A beam monitoring device, method, and system is disclosed. An exemplary beam monitoring device includes a one dimensional (1D) profiler. The 1D profiler includes a Faraday having an insulation material and a conductive material. The beam monitoring device further includes a two dimensional (2D) profiler. The 2D profiler includes a plurality of Faraday having an insulation material and a conductive material. The beam monitoring device further includes a control arm. The control arm is operable to facilitate movement of the beam monitoring device in a longitudinal direction and to facilitate rotation of the beam monitoring device about an axis.

Abstract translation: 公开了一种光束监测装置，方法和系统。 示例性束监测装置包括一维（1D）轮廓仪。 1D轮廓仪包括具有绝缘材料和导电材料的法拉第。 光束监测装置还包括二维（2D）轮廓仪。 2D轮廓仪包括具有绝缘材料和导电材料的多个法拉第。 光束监视装置还包括控制臂。 控制臂可操作以便于在纵向方向上使光束监视装置的移动，并且便于光束监视装置围绕轴的旋转。

公开(公告)号：US08698107B2

公开(公告)日：2014-04-15

申请号：US12987950

申请日：2011-01-10

Applicant: Ludovic Godet ,  Christopher J. Leavitt ,  Bon-Woong Koo ,  Anthony Renau

Inventor： Ludovic Godet ,  Christopher J. Leavitt ,  Bon-Woong Koo ,  Anthony Renau

IPC: H01J37/30

CPC classification number: H01J49/40 ,  H01J37/244 ,  H01J37/3171 ,  H01J37/32935 ,  H01J49/04 ,  H01J2237/24528 ,  H01J2237/24542

Abstract: A time-of-flight (TOF) ion sensor system for monitoring an angular distribution of ion species having an ion energy and incident on a substrate includes a drift tube wherein the ion sensor system is configured to vary an angle of the drift tube with respect to a plane of the substrate. The drift tube may have a first end configured to receive a pulse of ions from the ion species wherein heavier ions and lighter ions of the pulse of ions arrive in packets at a second end of the drift tube. An ion detector may be disposed at the second end of the ion sensor, wherein the ion detector is configured to detect the packets of ions derived from the pulse of ions and corresponding to respective different ion masses.

Abstract translation: 用于监测具有离子能并入射在衬底上的离子种类的角分布的飞行时间（TOF）离子传感器系统包括漂移管，其中离子传感器系统被配置为相对于漂移管的角度改变 到基板的平面。 漂移管可以具有构造成从离子物质接收离子脉冲的第一端，其中离子脉冲的较重离子和较轻离子在漂移管的第二端处分组到达。 离子检测器可以设置在离子传感器的第二端处，其中离子检测器被配置为检测源自离子脉冲的离子的分组并且对应于各个不同的离子质量。

公开(公告)号：US08692216B2

公开(公告)日：2014-04-08

申请号：US13839753

申请日：2013-03-15

Applicant: Sen Corporation

Inventor： Hiroyuki Kariya ,  Masaki Ishikawa ,  Yoshiaki Inda ,  Takeshi Kurose ,  Takanori Yagita ,  Toshio Yumiyama

IPC: H01J37/147 ,  H01L21/265 ,  H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/147 ,  H01J37/304 ,  H01J2237/24521 ,  H01J2237/24535 ,  H01J2237/24542 ,  H01L21/265 ,  H01L21/67213

Abstract: A vertical profile, a horizontal profile, and an integrated current value of an ion beam are measured by a plurality of stationary beam measuring instruments and a movable or stationary beam measuring device. At a beam current adjustment stage before ion implantation, a control device simultaneously performs at least one of adjustment of a beam current to a preset value of the beam current, adjustment of a horizontal beam size that is necessary to secure uniformity of the horizontal ion beam density, and adjustment of a vertical beam size that is necessary to secure the uniformity of the vertical ion implantation distribution on the basis of a measurement value of the stationary beam measuring instruments and the movable or stationary beam measuring device.

Abstract translation: 通过多个静止光束测量仪器和可移动或静止的光束测量装置测量离子束的垂直分布，水平分布和积分电流值。 在离子注入之前的光束电流调节阶段，控制装置同时执行将束电流调节到束电流的预设值中的至少一个，调整水平射束尺寸，以确保水平离子束的均匀性 基于静止光束测量仪器和可动或静止光束测量装置的测量值确保垂直离子注入分布的均匀性所必需的垂直光束尺寸的密度和密度和调整。