公开(公告)号：US20150028418A1

公开(公告)日：2015-01-29

申请号：US13876673

申请日：2012-11-08

Applicant: CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. ,  BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Won Seok Kim ,  Pil Seok Kim

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/78696 ,  H01L27/124 ,  H01L27/1288 ,  H01L27/1296 ,  H01L29/41733 ,  H01L29/66742 ,  H01L29/78621

Abstract: Embodiments of the invention provide a thin film transistor, an array substrate and a manufacturing method thereof, and a display panel. The thin film transistor comprises: an active layer pattern, a source electrode, a drain electrode and a gate electrode. The gate electrode is positioned above the active layer pattern, the source electrode is connected with the active layer pattern, the drain electrode is connected with the active layer pattern, and the source electrode and the drain electrode are disposed in an adjacent layer of the active layer pattern.

Abstract translation: 本发明的实施例提供一种薄膜晶体管，阵列基板及其制造方法以及显示面板。 薄膜晶体管包括：有源层图案，源电极，漏电极和栅电极。 栅电极位于有源层图案之上，源极与有源层图案连接，漏电极与有源层图案连接，源电极和漏极设置在活性层图案的相邻层中 层图案。