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公开(公告)号：US20220310701A1
公开(公告)日：2022-09-29
申请号：US17617941
申请日：2020-06-05
发明人： En-Tsung CHO , Chao WEI
IPC分类号： H01L27/32 , H01L51/52 , G02F1/1333 , G02F1/1335 , G06F3/041
摘要： A display device and a touch controller are disclosed. The display device includes a protective screen, a display panel, a photosensitive element, and a light-concentrating element. The protective screen is arranged on a light-emitting surface of the display device. The photosensitive element is arranged between the display panel and the protective screen. The photosensitive element includes a photosensitive surface that receives light, and a light-concentrating element is arranged on the photosensitive surface of the photosensitive element.
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公开(公告)号：US20220091448A1
公开(公告)日：2022-03-24
申请号：US17418255
申请日：2020-03-06
发明人： Kaijun LIU , En-Tsung CHO
IPC分类号： G02F1/13 , G01N23/2251 , H01L21/66 , G01N27/20
摘要： The present application discloses a test structure, a substrate and a method for manufacturing the substrate. The substrate includes a stacked substratum, a metal layer and an insulating layer; first via holes and second via holes disposed in different areas and passing through the insulating layer, and first transparent electrodes and second transparent electrodes disposed in different via holes and connected with the metal layer. The first via holes and the second via holes are formed through the same manufacture procedure, and the first transparent electrodes and the second transparent electrodes are formed through the same manufacture procedure.
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公开(公告)号：US20200259111A1
公开(公告)日：2020-08-13
申请号：US16637537
申请日：2017-09-21
发明人： En-Tsung CHO
摘要： A display panel comprises a substrate, active switches and light-emitting diodes formed on the substrate. The active switches are disposed between the substrate and the light-emitting diodes. Each light-emitting diode comprises a first electrode, a second electrode, and a quantum dot luminescent layer. The quantum dot luminescent layer comprises a mesoporous frame. The mesoporous frame adopts a self-assembling form, the mesoporous frame serves as a main material, and quantum dots are disposed in the mesoporous frame. The first electrode, the quantum dot luminescent layer and the second electrode are stacked in order. Since the quantum dots are disposed in the mesoporous frame, the sizes of the quantum dots and the uniformity of their arrangement are adjusted and controlled, the light-emitting diodes with different luminous colors depending on the sizes of the quantum dots are then adjusted.
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公开(公告)号：US20190326333A1
公开(公告)日：2019-10-24
申请号：US16462000
申请日：2017-10-16
发明人： En-Tsung CHO
IPC分类号： H01L27/12 , H01L29/423
摘要： A method of manufacturing an active array substrate, comprising: providing a substrate; forming gate electrodes on the substrate; forming a gate insulating layer, a semiconductor layer and an Ohmic contact layer on the transparent substrate and the gate electrodes in order; forming source electrodes and drain electrodes on the Ohmic contact layer; forming a protection layer on the source electrodes and the drain electrodes; and forming a pixel electrode layer on the protection layer, wherein the pixel electrode layer is electrically connected to the drain electrode. The gate insulating layer comprises nanometer porous silicon and nanometer particles, and a dielectric constant of the nanometer particle is greater than a dielectric constant of the nanometer porous silicon.
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公开(公告)号：US20190014266A1
公开(公告)日：2019-01-10
申请号：US15578501
申请日：2017-08-17
发明人： En-Tsung CHO , Fengyun YANG
IPC分类号： H04N5/232 , H04N5/225 , G02F1/1335 , G02F1/1368 , G02F1/133 , G02B1/04
摘要： The present invention provides a display panel and a display apparatus using the same. The display panel comprises: a first substrate; a second substrate; a liquid crystal layer disposed between the first substrate and the second substrate; an image sensing module disposed on one side of the second substrate facing the first substrate; a lens array disposed on one side of the first substrate acing the second substrate and on a position corresponding to the image sensing module; and an active switch array disposed on the side of the second substrate facing the first substrate, wherein the image sensing module is configured to receive the focused image light.
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公开(公告)号：US20220093801A1
公开(公告)日：2022-03-24
申请号：US17298015
申请日：2019-12-26
发明人： En-Tsung CHO , Qionghua MO
IPC分类号： H01L29/786 , H01L29/66
摘要： This application discloses a display panel, a method for manufacturing a display panel, and a display device. The method includes steps of forming, in a display region of the display panel, a first active switch including a first semiconductor layer, and forming, in a non-display region of the display panel, a second active switch including a second semiconductor layer. A material of the first semiconductor layer formed is an oxide, a material of the second semiconductor layer formed is polysilicon, and the first semiconductor layer and the second semiconductor layer are formed on an identical layer.
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公开(公告)号：US20210391474A1
公开(公告)日：2021-12-16
申请号：US17284468
申请日：2018-12-10
发明人： Qionghua MO , En-Tsung CHO
IPC分类号： H01L29/786 , H01L29/423 , H01L29/66
摘要： The present application relates to an active switch, a manufacturing method thereof and a display device. The manufacturing method of the active switch includes: sequentially forming a gate electrode, a gate insulating layer, an active layer, a semiconductor composite layer and a source electrode and a drain electrode on a substrate. The semiconductor composite layer includes a first N-type heavily doped amorphous silicon layer, a first N-type lightly doped amorphous silicon layer, a second N-type heavily doped amorphous silicon layer and a second N-type lightly doped amorphous silicon layer which are sequentially stacked, where the ion doping concentration of the first N-type heavily doped amorphous silicon layer is lower than that of the second N-type heavily doped amorphous silicon layer, and the ion doping concentration of the first N-type lightly doped amorphous silicon layer is higher than that of the second N-type lightly doped amorphous silicon layer.
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公开(公告)号：US20200209168A1
公开(公告)日：2020-07-02
申请号：US16633586
申请日：2018-07-31
发明人： En-Tsung CHO , Kun FAN
IPC分类号： G01N22/00
摘要： Disclosed by the embodiments of the present application are a semiconductor testing method and testing device; the testing method comprises the steps of: exciting a test sample by means of a pulse laser to generate a photoconductive effect; detecting weak information of the photoconductive effect; obtaining a composite lifetime of unbalanced carriers of the test sample by means of analyzing the photoconductive effect and the weak information. The testing device comprises: a pulse laser emitter, a microwave generator, a microwave receiver, and a calculation device.
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公开(公告)号：US20190067402A1
公开(公告)日：2019-02-28
申请号：US15740778
申请日：2017-10-20
发明人： En-Tsung CHO
IPC分类号： H01L27/32
摘要： This application provides a display panel and a manufacturing method thereof. The display panel includes: a first substrate; a plurality of gate lines, formed on the first substrate; a gate coverage layer, formed on the first substrate, and covering the plurality of gate lines; a plurality of data lines, formed on the gate coverage layer; a passivation layer, formed on the gate coverage layer, and covering a source and a drain in a source and drain region; an outer coating layer, formed on the passivation layer; an anode electrode layer, formed on the outer coating layer; an embankment layer, formed on the outer coating layer, and covering the anode electrode layer; a pixel definition layer, formed on the embankment layer, and covering the anode electrode layer, where the pixel definition layer includes a color light emitting diode, a red sensor, a green sensor and a blue sensor.
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公开(公告)号：US20190067388A1
公开(公告)日：2019-02-28
申请号：US15740728
申请日：2017-10-20
发明人： En-Tsung CHO
摘要： This application provides a display panel and a manufacturing method thereof and a display device. The display panel includes: a first substrate; gate lines formed on the first substrate; a gate coverage layer formed on the first substrate, and covering the gate lines; data lines formed on the gate coverage layer; a passivation layer, formed on the gate coverage layer; an outer coating layer, formed on the passivation layer; an anode electrode layer, formed on the outer coating layer; an embankment layer, formed on the outer coating layer, and covering the anode electrode layer; a pixel definition layer, formed on the embankment layer, and covering the anode electrode layer; and a cathode electrode layer, formed on the pixel definition layer, wherein the pixel definition layer includes an organic light emitting diode and a sensor.
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