公开(公告)号：US07989327B2

公开(公告)日：2011-08-02

申请号：US12340839

申请日：2008-12-22

Applicant: Benjamin Vincent ,  Laurent Clavelier ,  Jean-Francois Damlencourt

Inventor： Benjamin Vincent ,  Laurent Clavelier ,  Jean-Francois Damlencourt

IPC: H01L21/20

CPC classification number: H01L21/32105 ,  H01L21/7624

Abstract: A method of manufacturing a semi-conductor on insulator substrate from an SOI substrate, wherein a Si1-xGex layer is formed on a superficial layer of silicon having a buried electrical insulating layer. A silicon oxide layer is formed on the Si1-xGex layer. The resulting stack of silicon, Si1-xGex and silicon oxide layers is etched up to the buried insulating layer leaving an island of the stack, or up to the superficial layer leaving a zone of silicon and an island of the stack. A mask is formed to protect against oxidation on the etched structure, wherein the protective mask only leaves visible the silicon oxide layer of the island. The germanium of the Si1-xGex layer is condensed on the island to obtain an island comprising a layer that is enriched in germanium, or even a layer of germanium, on the insulating layer, with a silicon oxide layer on top of it.

Abstract translation: 一种从SOI衬底制造绝缘体上半导体衬底的方法，其中在具有掩埋电绝缘层的硅的表面层上形成Si1-xGex层。 在Si1-xGex层上形成氧化硅层。 所得到的硅叠层Si1-xGex和氧化硅层被蚀刻到掩埋绝缘层上，留下堆叠的岛，或直到离开硅区域和堆叠岛的表层。 形成掩模以防止在蚀刻结构上的氧化，其中保护掩模仅使岛的氧化硅层可见。 Si1-xGex层的锗在岛上被冷凝，以获得在绝缘层上富含锗或甚至一层锗的层，其上面具有氧化硅层。

公开(公告)号：US20100035414A1

公开(公告)日：2010-02-11

申请号：US12525756

申请日：2008-02-07

Applicant: Benjamin Vincent ,  Jean-Francois Damlencourt ,  Yves Morand

Inventor： Benjamin Vincent ,  Jean-Francois Damlencourt ,  Yves Morand

IPC: H01L21/20 ,  H01L21/336

CPC classification number: H01L21/7624 ,  H01L21/28518

Abstract: A method for making a germanium-on-insulator layer from an SGOI substrate, including: a) depositing on the substrate a layer of a metallic element M capable of selectively forming a silicide, the layer being in contact with a silicon-germanium alloy layer; and b) a reaction between the alloy layer and the layer of a metallic element M, by which a stack of M silicide-germanium-insulator layers is obtained. Such a method may, for example, find application to production of electronic devices such as MOSFET transistors.

Abstract translation: 一种从SGOI衬底制造绝缘体上锗层的方法，包括：a）在衬底上沉积能够选择性地形成硅化物的金属元素M的层，该层与硅 - 锗合金层接触 ; 以及b）合金层与金属元素M层之间的反应，通过该反应得到一叠M硅化物 - 锗 - 绝缘体层。 这种方法可以例如用于生产诸如MOSFET晶体管的电子器件。