公开(公告)号：US20060124867A1

公开(公告)日：2006-06-15

申请号：US11012585

申请日：2004-12-15

Applicant: Bo Vanderberg ,  Michael Cristoforo ,  Kevin Wenzel

Inventor： Bo Vanderberg ,  Michael Cristoforo ,  Kevin Wenzel

IPC: H01J37/244

CPC classification number: H01J37/3171 ,  H01J37/244 ,  H01J2237/024 ,  H01J2237/31703

Abstract: An ion beam current density profiler includes a pair of counter-rotating cylindrical masks each featuring a helical slot. The intersection of the slots forms an aperture that scans the width of a ribbon ion beam to allow discrete portions of the beam to impact an inner, concentric current collecting cylinder.

Abstract translation: 离子束电流密度分析仪包括一对具有螺旋槽的反转圆柱形掩模。 槽的交点形成扫描带状离子束的宽度的孔，以允许束的离散部分撞击内部同心的集流筒。

公开(公告)号：US20060017010A1

公开(公告)日：2006-01-26

申请号：US10896821

申请日：2004-07-22

Applicant: Bo Vanderberg ,  Kevin Wenzel ,  Robert Rathmell ,  Joseph Ferrara ,  David Sabo

Inventor： Bo Vanderberg ,  Kevin Wenzel ,  Robert Rathmell ,  Joseph Ferrara ,  David Sabo

IPC: G21G5/00

CPC classification number: H01J37/1475 ,  G21K1/093 ,  H01F7/202 ,  H01F41/0226 ,  H01J37/3171 ,  H01J2237/152

Abstract: An ion beam implanter includes an ion beam source for generating an ion beam moving along a beam line and a vacuum or implantation chamber wherein a workpiece, such as a silicon wafer is positioned to intersect the ion beam for ion implantation of a surface of the workpiece by the ion beam. A scanning magnet is most preferably used to control a side to side scanning of the ion beam so that an entire implantation surface of the workpiece can be processed.

Abstract translation: 离子束注入机包括用于产生沿束线移动的离子束的离子束源和真空或注入室，其中诸如硅晶片的工件被定位成与离子束相交以离子注入工件表面 通过离子束。 扫描磁体最优选地用于控制离子束的侧面扫描，使得可以处理工件的整个植入表面。

公开(公告)号：US20050023487A1

公开(公告)日：2005-02-03

申请号：US10632234

申请日：2003-07-31

Applicant: Kevin Wenzel ,  Bo Vanderberg

Inventor： Kevin Wenzel ,  Bo Vanderberg

IPC: G21K1/14 ,  H01J37/02 ,  H01J37/317

CPC classification number: H01J37/026 ,  H01J37/3171 ,  H01J2237/0041

Abstract: Ion implantation systems and beam containment apparatus therefor are provided in which a photoelectron source and a photon source are provided along a beam path. The photon source, such as a UV lamp, provides photons to a photoemissive material of the photoelectron source to generate photoelectrons for enhanced beam containment in the ion implantation system.

Abstract translation: 提供了离子注入系统和其束保护装置，其中光束源和光子源沿光束路径设置。 光子源（例如UV灯）向光电子源的光发射材料提供光子，以产生用于在离子注入系统中增强的束保持的光电子。