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    MANUFACTURING METHODS TO REDUCE SURFACE PARTICLE IMPURITIES AFTER A PLASMA PROCESS
    1.
    发明申请
    MANUFACTURING METHODS TO REDUCE SURFACE PARTICLE IMPURITIES AFTER A PLASMA PROCESS 审中-公开

    公开(公告)号：US20180323045A1

    公开(公告)日：2018-11-08

    申请号：US15969472

    申请日：2018-05-02

    申请人： Tokyo Electron Limited

    发明人： Jason Marion ,  Yusuke Yoshida ,  Brendan Bathrick ,  Sergey Voronin ,  Alok Ranjan

    IPC分类号： H01J37/32 ,  H01L21/67

    CPC分类号： H01J37/32834 ,  H01J37/32091 ,  H01J37/32816 ,  H01J2237/0041 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/6831

    摘要： Manufacturing methods are disclosed to reduce surface particle impurities after a plasma process (e.g., etch, deposition, etc.) by repelling particles trapped within particle wells to reduce surface particle impurities on microelectronic workpieces after termination of the plasma process. Rather than turn off pressure and source power at the termination of the plasma process, the disclosed embodiments first enter a sequence to adjust process parameters to repel particles in a particle well in order to reduce or eliminate the particle well prior to terminating the plasma process. During this particle repel sequence, certain disclosed embodiments adjust parameters to maintain an electrostatic field above the surface of the wafer utilizing low plasma density and ion energy conditions that help to repel particles from the microelectronic workpiece. The disclosed methods allow for the particle well to be exhausted well prior to the collapse of electrostatic forces when the plasma process is terminated.

    METHOD AND SYSTEM FOR INSPECTING AN EUV MASK
    4.
    发明申请
    METHOD AND SYSTEM FOR INSPECTING AN EUV MASK 审中-公开
    检查防毒面具的方法和系统

    公开(公告)号：US20170052129A1

    公开(公告)日：2017-02-23

    申请号：US15339421

    申请日：2016-10-31

    申请人： Hermes Microvision, Inc.

    发明人： Guochong Weng ,  Youjin Wang ,  Chiyan Kuan ,  Chung-Shih Pan

    IPC分类号： G01N23/225 ,  H01J37/20 ,  H01J37/28 ,  H01J37/02

    CPC分类号： G01N23/2251 ,  H01J37/026 ,  H01J37/20 ,  H01J37/28 ,  H01J2237/004 ,  H01J2237/0041 ,  H01J2237/0044 ,  H01J2237/2007 ,  H01J2237/2008 ,  H01J2237/202 ,  H01J2237/2448 ,  H01J2237/2602 ,  H01J2237/2811 ,  H01J2237/2813 ,  H05F3/02

    摘要： A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.

    摘要翻译： 提供一种用于接地极紫外线掩模（EUV掩模）的结构，用于通过电子束检查工具在检查期间对EUV掩模进行放电。 用于将EUV掩模接地的结构包括至少一个接地引脚以接触EUV掩模上的导电区域，其中EUV掩模可以在侧壁或/或背侧上具有另外的导电层。 通过使用电子束检查系统来增强EUV掩模的检查质量，因为EUV掩模上的累积充电是接地的。 通过同时使用电子束扫描连续移动台上的EUV掩模的反射表面。 舞台的移动方向垂直于电子束的扫描方向。

    Apparatus and techniques for energetic neutral beam processing
    7.
    发明授权
    Apparatus and techniques for energetic neutral beam processing 有权
    用于高能中性束处理的装置和技术

    公开(公告)号：US09288889B2

    公开(公告)日：2016-03-15

    申请号：US13798829

    申请日：2013-03-13

    申请人： Varian Semiconductor Equipment Associates, Inc.

    发明人： Svetlana B. Radovanov ,  Bon-Woong Koo ,  Peter F. Kurunczi ,  Ludovic Godet

    IPC分类号： H05H3/02 ,  H01J37/32 ,  H01J37/317

    CPC分类号： H05H3/02 ,  H01J37/3171 ,  H01J37/32357 ,  H01J37/32422 ,  H01J2237/0041 ,  H01J2237/024

    摘要： A processing system includes a plasma source chamber to generate a plasma; an extraction assembly adjacent the plasma source chamber having an extraction plate and a beam modifier, the extraction plate defining an extraction plate plane and an aperture to extract ions from the plasma source chamber into an ion beam, the beam modifier adjacent to the extraction plate and operative to adjust an ion beam trajectory angle of the ion beam with respect to a perpendicular to the extraction plate plane; and a neutralizer to receive the ion beam extracted by the extraction assembly, convert the ion beam to a neutral beam and direct the neutral beam towards a substrate, the neutralizer having one or more neutralizer plates arranged at a neutralizer plate angle, the extraction assembly and the neutralizer interoperative to provide an ion beam incident angle of the ion beam with respect to the neutralizer plates.

    摘要翻译： 一种处理系统包括：产生等离子体的等离子体源室; 邻近等离子体源室的提取组件具有提取板和光束调节器，提取板限定提取板平面和将离子从等离子体源室提取为离子束的孔，与提取板相邻的光束修改器和 可操作地调整离子束相对于提取板平面垂直的离子束轨迹角; 以及中和器，用于接收由提取组件提取的离子束，将离子束转换成中性光束并将中性光束引向衬底，中和器具有以中和板角度排列的一个或多个中和板，提取组件和 中和器相互作用以提供离子束相对于中和板的离子束入射角。

    STRUCTURE ELECTRON BEAM INSPECTION SYSTEM FOR INSPECTING EXTREME ULTRAVIOLET MASK AND STRUCTURE FOR DISCHARGING EXTREME ULTRAVIOLET MASK
    8.
    发明申请
    STRUCTURE ELECTRON BEAM INSPECTION SYSTEM FOR INSPECTING EXTREME ULTRAVIOLET MASK AND STRUCTURE FOR DISCHARGING EXTREME ULTRAVIOLET MASK 有权
    结构电子束检测系统，用于检测极端的超紫外线掩膜和结构，用于放出极端的超紫外线掩模

    公开(公告)号：US20150305131A1

    公开(公告)日：2015-10-22

    申请号：US14755626

    申请日：2015-06-30

    申请人： Hermes Microvision Inc.

    发明人： You-Jin WANG ,  Chiyan KUAN ,  Chung-Shih PAN

    IPC分类号： H05F3/02 ,  H01J37/02

    CPC分类号： H05F3/02 ,  G01N23/2251 ,  H01J37/026 ,  H01J37/20 ,  H01J2237/0041 ,  H01J2237/0044 ,  H01J2237/2008 ,  H01J2237/2811

    摘要： A structure for discharging an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for discharging an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and bottom. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUU mask is grounded.

    摘要翻译： 提供一种用于放电极紫外线掩模（EUV掩模）的结构，用于通过电子束检查工具在检查期间对EUV掩模进行放电。 用于放电EUV掩模的结构包括至少一个接触引脚以接触EUV掩模上的导电区域，其中EUV掩模可以在侧壁或/或底部上具有另外的导电层。 通过使用电子束检查系统来增强EUV掩模的检查质量，因为EUU掩模上的累积充电是接地的。

    Ion implantation with charge and direction control
    9.
    发明授权
    Ion implantation with charge and direction control 有权
    离子注入充电和方向控制

    公开(公告)号：US08922122B2

    公开(公告)日：2014-12-30

    申请号：US13308614

    申请日：2011-12-01

    申请人： Chih-Hong Hwang ,  Chun-Lin Chang ,  Nai-Han Cheng ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    发明人： Chih-Hong Hwang ,  Chun-Lin Chang ,  Nai-Han Cheng ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    IPC分类号： H01J7/24

    CPC分类号： H01J37/026 ,  H01J3/02 ,  H01J3/022 ,  H01J3/26 ,  H01J37/06 ,  H01J37/3171 ,  H01J2237/0041 ,  H01J2237/31705

    摘要： The present disclosure provides for various advantageous methods and apparatus of controlling electron emission. One of the broader forms of the present disclosure involves an electron emission element, comprising an electron emitter including an electron emission region disposed between a gate electrode and a cathode electrode. An anode is disposed above the electron emission region, and a voltage set is disposed above the anode. A first voltage applied between the gate electrode and the cathode electrode controls a quantity of electrons generated from the electron emission region. A second voltage applied to the anode extracts generated electrons. A third voltage applied to the voltage set controls a direction of electrons extracted through the anode.

    摘要翻译： 本公开提供了控制电子发射的各种有利的方法和装置。 本公开的更广泛形式之一涉及电子发射元件，其包括电子发射器，其包括设置在栅电极和阴极之间的电子发射区。 阳极设置在电子发射区域的上方，并且在阳极上设置电压组。 施加在栅电极和阴极之间的第一电压控制从电子发射区产生的电子量。 施加到阳极的第二电压提取产生的电子。 施加到电压组的第三电压控制通过阳极提取的电子的方向。