Photon source
    11.
    发明授权
    Photon source 有权
    光源

    公开(公告)号:US06657222B1

    公开(公告)日:2003-12-02

    申请号:US09662002

    申请日:2000-09-14

    IPC分类号: H01L2940

    CPC分类号: B82Y20/00 H01L27/15

    摘要: A photon source, comprising a first semiconductor region having excess carriers with a first conductivity type, and a second semiconductor region having excess carriers with a second conductivity type, the first and second conductivity types being opposing conductivity types; means for creating a surface acoustic wave (SAW) travelling from the first semiconductor region to the second semiconductor region such that excess carriers from the first semiconductor region are carried by the wave to the second region and quantizing means for quantizing the carrier transport caused by the wave, such that the number of carriers introduced into the second semiconductor region can be controlled to the accuracy of a single carrier.

    摘要翻译: 一种光子源,包括具有第一导电类型的过量载流子的第一半导体区域和具有第二导电类型的过量载流子的第二半导体区域,第一和第二导电类型是相反的导电类型; 用于产生从第一半导体区域传播到第二半导体区域的表面声波(SAW)的装置,使得来自第一半导体区域的过量载流子被波浪传送到第二区域,并且量化装置用于量化由 使得可以将引入第二半导体区域的载流子的数量控制为单载波的精度。