-
公开(公告)号:US20050106788A1
公开(公告)日:2005-05-19
申请号:US11001913
申请日:2004-12-02
申请人: Ricky Amos , Katayun Barmak , Diane Boyd , Cyril Cabral , Meikei Leong , Thomas Kanarsky , Jakub Kedzierski
发明人: Ricky Amos , Katayun Barmak , Diane Boyd , Cyril Cabral , Meikei Leong , Thomas Kanarsky , Jakub Kedzierski
IPC分类号: H01L27/092 , H01L21/28 , H01L21/336 , H01L21/8238 , H01L21/84 , H01L31/0392
CPC分类号: H01L21/823835 , H01L21/28097 , H01L21/823842 , H01L21/84 , H01L29/66545
摘要: Methods of forming complementary metal oxide semiconductor (CMOS) devices having multiple-threshold voltages which are easily tunable are provided. Total salicidation with a metal bilayer (representative of the first method of the present invention) or metal alloy (representative of the second method of the present invention) is provided. CMOS devices having multiple-threshold voltages provided by the present methods are also described.