公开(公告)号：US20050079687A1

公开(公告)日：2005-04-14

申请号：US10806433

申请日：2004-03-23

申请人： Jeong Yoon ,  Bang Oh ,  Kuk Yi

发明人： Jeong Yoon ,  Bang Oh ,  Kuk Yi

IPC分类号： H01L21/78 ,  H01L29/22 ,  H01L33/00

CPC分类号： H01L33/0095

摘要： Disclosed is a method for efficiently separating a sapphire wafer serving as a substrate, on which semiconductor elements are formed, into unit chips by scribing the sapphire wafer, after grinding and lapping a rear surface of the sapphire wafer and then sand-blasting the sapphire wafer. The method includes the steps of: (a) grinding a rear surface of the sapphire wafer so that the sapphire wafer has a designated thickness; (b) lapping the rear surface of the ground sapphire wafer so that the sapphire wafer has a designated thickness; (c) polishing the rear surface of the lapped sapphire wafer so that the sapphire wafer has a designated thickness; (d) sand-blasting the rear surface of the polished sapphire wafer by uniformly blasting particles at a designated pressure during a designated time onto the rear surface of the polished sapphire wafer; and (e) scribing the rear surface of the sand-blast ground sapphire wafer.

摘要翻译： 公开了通过在研磨和研磨蓝宝石晶片的后表面之后，通过划线蓝宝石晶片将用作基板的蓝宝石晶片（其上形成有半导体元件）分离成单元芯片的方法，然后对蓝宝石晶片进行喷砂处理 。 该方法包括以下步骤：（a）研磨蓝宝石晶片的后表面，使得蓝宝石晶片具有指定的厚度; （b）研磨蓝宝石晶片的后表面，使得蓝宝石晶片具有指定的厚度; （c）抛光研磨的蓝宝石晶片的后表面，使得蓝宝石晶片具有指定的厚度; （d）通过在指定时间内将指定压力的颗粒均匀地喷射到抛光的蓝宝石晶片的后表面上来对抛光的蓝宝石晶片的后表面进行喷砂; 和（e）划线沙尘蓝宝石晶片的后表面。