公开(公告)号：US20130134497A1

公开(公告)日：2013-05-30

申请号：US13304378

申请日：2011-11-24

申请人： Shih-Guei Yan ,  Wen-Jer Tsai ,  Chih-Chieh Cheng

发明人： Shih-Guei Yan ,  Wen-Jer Tsai ,  Chih-Chieh Cheng

IPC分类号： H01L29/788 ,  H01L21/336

CPC分类号： H01L21/28273 ,  G11C16/0458 ,  H01L21/28282 ,  H01L29/42332 ,  H01L29/42348 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7887 ,  H01L29/7923

摘要： A memory device is described, including a gate over a substrate, a gate dielectric between the gate and the substrate, and two charge storage layers. The width of the gate is greater than that of the gate dielectric, so that two gaps are present at both sides of the gate dielectric and between the gate and the substrate. Each charge storage layer includes a body portion in one of the gaps, a first extension portion connected with the body portion and protruding out of the corresponding sidewall of the gate, and a second extension portion connected to the first extension portion and extending along the sidewall of the gate, wherein the edge of the first extension portion protrudes from the sidewall of the second extension portion.

摘要翻译： 描述了存储器件，包括衬底上的栅极，栅极和衬底之间的栅极电介质，以及两个电荷存储层。 栅极的宽度大于栅极电介质的宽度，使得在栅极电介质的两侧以及栅极和衬底之间存在两个间隙。 每个电荷存储层包括在一个间隙中的主体部分，与主体部分连接并从门的相应侧壁突出的第一延伸部分，以及连接到第一延伸部分并沿着侧壁延伸的第二延伸部分 所述第一延伸部分的边缘从所述第二延伸部分的侧壁突出。