公开(公告)号：US20120313214A1

公开(公告)日：2012-12-13

申请号：US13156933

申请日：2011-06-09

申请人： Chin-Tsan Yeh ,  Chun-Fu Chen ,  Yung-Tai Hung ,  Chin-Ta Su

发明人： Chin-Tsan Yeh ,  Chun-Fu Chen ,  Yung-Tai Hung ,  Chin-Ta Su

IPC分类号： H01L29/06 ,  H01L21/762

CPC分类号： H01L21/76232

摘要： A polysilicon structure and method of forming the polysilicon structure are disclosed, where the method includes a two-step deposition and planarization process. The disclosed process reduces the likelihood of defects such as voids, particularly where polysilicon is deposited in a trench having a high aspect ratio. A first polysilicon structure is deposited that includes a trench liner portion and a first upper portion. The trench liner portion only partially fills the trench, while the first upper portion extends over the adjacent field isolation structures. Next, at least a portion of the first upper portion of the first polysilicon structure is removed. A second polysilicon structure is then deposited that includes a trench plug portion and a second upper portion. The trench is filled by the plug portion, while the second upper portion extends over the adjacent field isolation structures. The second upper portion is then removed.

摘要翻译： 公开了多晶硅结构和形成多晶硅结构的方法，其中该方法包括两步沉积和平坦化处理。 所公开的方法降低诸如空隙的缺陷的可能性，特别是在具有高纵横比的沟槽中沉积多晶硅时。 沉积包括沟槽衬垫部分和第一上部部分的第一多晶硅结构。 沟槽衬垫部分仅部分地填充沟槽，而第一上部部分在相邻的隔离结构上延伸。 接下来，去除第一多晶硅结构的第一上部的至少一部分。 然后沉积包括沟槽塞部分和第二上部部分的第二多晶硅结构。 沟槽由插塞部分填充，而第二上部部分延伸在相邻的隔离结构上。 然后移除第二个上部。