公开(公告)号：US07842539B2

公开(公告)日：2010-11-30

申请号：US12145371

申请日：2008-06-24

申请人： Seong Ju Park ,  Min Suk Oh ,  Dae Kyu Hwang ,  Min Ki Kwon

发明人： Seong Ju Park ,  Min Suk Oh ,  Dae Kyu Hwang ,  Min Ki Kwon

IPC分类号： H01L21/00

CPC分类号： H01L29/22 ,  H01L21/02554 ,  H01L21/02579 ,  H01L21/02631 ,  H01L21/02672 ,  Y10S438/903

摘要： There are provided a method of manufacturing a zinc oxide semiconductor, and a zinc oxide semiconductor manufactured using the method. A metal catalyst layer is formed on a zinc oxide thin film that has an electrical characteristic of a n-type semiconductor, and a heat treatment is performed thereon so that the zinc oxide thin film is modified into a zinc oxide thin film having an electrical characteristic of a p-type semiconductor. Hydrogen atoms existing in the zinc oxide thin film are removed by a metal catalyst during the heat treatment. Accordingly, the hydrogen atoms existing in the zinc oxide thin film are removed by the metal catalyst and the heat treatment, and the concentration of holes serving as carriers is increased. That is, an n-type zinc oxide thin film is modified into a highly-concentrated p-type zinc oxide semiconductor.

摘要翻译： 提供一种制造氧化锌半导体的方法和使用该方法制造的氧化锌半导体。 在具有n型半导体的电特性的氧化锌薄膜上形成金属催化剂层，并对其进行热处理，使得氧化锌薄膜被修饰为具有电特性的氧化锌薄膜 的p型半导体。 存在于氧化锌薄膜中的氢原子在热处理期间被金属催化剂除去。 因此，通过金属催化剂和热处理除去存在于氧化锌薄膜中的氢原子，并且用作载流子的空穴的浓度增加。 也就是说，将n型氧化锌薄膜改性为高浓度的p型氧化锌半导体。

公开(公告)号：US20090001363A1

公开(公告)日：2009-01-01

申请号：US12145371

申请日：2008-06-24

申请人： Seong Ju Park ,  Min Suk Oh ,  Dae Kyu Hwang ,  Min Ki Kwon

发明人： Seong Ju Park ,  Min Suk Oh ,  Dae Kyu Hwang ,  Min Ki Kwon

IPC分类号： H01L29/10 ,  H01L21/00

CPC分类号： H01L29/22 ,  H01L21/02554 ,  H01L21/02579 ,  H01L21/02631 ,  H01L21/02672 ,  Y10S438/903

摘要： There are provided a method of manufacturing a zinc oxide semiconductor, and a zinc oxide semiconductor manufactured using the method. A metal catalyst layer is formed on a zinc oxide thin film that has an electrical characteristic of a n-type semiconductor, and a heat treatment is performed thereon so that the zinc oxide thin film is modified into a zinc oxide thin film having an electrical characteristic of a p-type semiconductor. Hydrogen atoms existing in the zinc oxide thin film are removed by a metal catalyst during the heat treatment. Accordingly, the hydrogen atoms existing in the zinc oxide thin film are removed by the metal catalyst and the heat treatment, and the concentration of holes serving as carriers is increased. That is, an n-type zinc oxide thin film is modified into a highly-concentrated p-type zinc oxide semiconductor.

摘要翻译： 提供一种制造氧化锌半导体的方法和使用该方法制造的氧化锌半导体。 在具有n型半导体的电特性的氧化锌薄膜上形成金属催化剂层，并对其进行热处理，使得氧化锌薄膜被修饰为具有电特性的氧化锌薄膜 的p型半导体。 存在于氧化锌薄膜中的氢原子在热处理期间被金属催化剂除去。 因此，通过金属催化剂和热处理除去存在于氧化锌薄膜中的氢原子，并且用作载流子的空穴的浓度增加。 也就是说，将n型氧化锌薄膜改性为高浓度的p型氧化锌半导体。