摘要:
An image sensor circuit includes a pixel array, a plurality of column analog-to-digital conversion (ADC) circuits, and at least two memory blocks. Each column ADC circuit is connected to receive analog pixel signals provided from corresponding pixel circuits of the pixel array, and is configured to convert the received analog pixel signals into digital pixel signals. Each memory block is connected to receive digital pixel signals provided from corresponding column ADC circuits of the plurality of column ADC circuits. At least two of the at least two memory blocks are connected to receive digital pixel signals that are provided from corresponding column ADC circuits that are located to a same side of the pixel array. Each memory block of the at least two memory blocks includes a plurality of memory cells, one or more sense amplifiers connected to the memory cells by a readout bus, and a memory controller.
摘要:
Dual ramp analog-to-digital converters and methods allow for performing analog-to-digital conversion of an analog signal. Various dual ramp analog-to-digital converters and methods allow for applying the analog signal and a coarse ramp to a same input of a comparator, and applying a fine ramp to another input of the comparator. Some dual ramp analog-to-digital converters and methods allow for applying the analog signal, a coarse ramp, and a fine ramp to a same input of a comparator. Various dual ramp analog-to-digital converters and methods allow for applying the analog signal to an input of a first comparator, applying a coarse ramp to the input of the first comparator through a coarse ramp switch, applying the analog signal to an input of a second comparator, and applying a fine ramp to another input of the second comparator.
摘要:
Circuits and methods may be improved by using ADCs that compensate for the effect of comparator input offset on comparator decisions. Offset compensation may be implemented in an ADC by using an amplifier section between the input of the ADC and a comparator section of the ADC to amplify the signals supplied to the comparator inputs and thereby reduce the effect of comparator offset on the comparator decision. The comparator section may be an autozeroing comparator section that is capable of performing an offset reduction operation to store offset compensation values at capacitors provided at its inputs. The amplifier section may be an autozeroing amplifier section having one or more amplifier stages that are capable of performing an offset reduction operation to store offset compensation values at capacitors provided at their inputs. Offset compensation may also be implemented using an autozeroing comparator section without a preceding amplifier section.
摘要:
A binning circuit and related method, wherein pixel signals from column circuits in a sensor circuit are sampled and interpolated. The binning circuit samples analog pixel and reset signals from different sensor circuit column lines. Once a predetermined number of column lines are sampled in the binning circuit, the sampled pixel signals are averaged together in one operation, while the reset signals are averaged together in another operation.
摘要:
An A/D converter suitable for use in a system in which the signal power of noise increases with the signal power of the signal, such as an imaging system, utilizes a variable quantization system for converting analog signals into digital signals. The variable quantization is controlled so that at low signal levels the quantization is similar or identical to conventional A/D converters, while the quantization level is increased at higher signal levels. Thus, higher resolution is provided at low signal levels while lower resolution is produced at high signal levels.
摘要:
An image sensor includes at least one pixel with a transfer gate that is controllable among at least three biasing conditions, including a first biasing condition in which electrons are transferable from a photodiode to a potential well under the transfer gate, a second biasing condition in which the electrons are confined in the potential well under the transfer gate, and a third biasing condition in which the electrons are transferable out of the potential well under the transfer gate. The pixel includes a p+ type doped barrier implant located at least partially under a portion of the transfer gate, and a pinned charge transfer barrier located on the opposite side of the transfer gate from the photodiode that includes a p+ type doped region and an n-type doped region. The image sensor can operate in a global shutter mode and/or a rolling shutter mode.
摘要:
A camera includes a first processing device, a second processing device, and an image sensor that has a first plurality of ports connected to the first processing device and a second plurality of ports connected to the second processing device. A method includes providing first data from the first plurality of ports of the image sensor to the first processing device, and providing second data from the second plurality of ports of the image sensor to the second processing device. Another camera includes a first memory, a second memory, and an image sensor having a first plurality of ports connected to the first memory and a second plurality of ports connected to the second memory. A method includes providing first data from the first plurality of ports to the first memory and providing second data from the second plurality of ports to the second memory.