公开(公告)号：US20130044781A1

公开(公告)日：2013-02-21

申请号：US13658836

申请日：2012-10-24

Applicant: Furukawa Electric Co., Ltd.

Inventor： Hidehiro TANIGUCHI ,  Kouhei KINUGAWA

IPC: H01S5/20 ,  H01L21/02

CPC classification number: H01S5/162 ,  B82Y20/00 ,  H01S5/2072 ,  H01S5/22 ,  H01S5/2202 ,  H01S5/2231 ,  H01S5/34313

Abstract: A semiconductor laser element includes a substrate of a first conduction type and a layered semiconductor structure formed on the substrate. The layered semiconductor structure includes a first semiconductor layer of the first conduction type formed on the substrate, an active layer formed on the first semiconductor layer, and a second semiconductor layer of a second conduction type formed on the active layer, the second conduction type being opposite to the first conduction type. The first semiconductor layer, the active layer, and the second semiconductor layer include a non-window region through which a light emitted from the active layer passes and a window region surrounding the non-window region. Band gap energy of the active layer is larger in the window region than in the non-window region. The second semiconductor layer includes a current confinement layer.

Abstract translation: 半导体激光元件包括形成在基板上的第一导电型基板和层状半导体结构。 层状半导体结构包括在基板上形成的第一导电类型的第一半导体层，形成在第一半导体层上的有源层和形成在有源层上的第二导电类型的第二半导体层，第二导电类型为 与第一导电类型相反。 第一半导体层，有源层和第二半导体层包括从有源层发射的光通过的非窗口区域和围绕非窗口区域的窗口区域。 活性层的带隙能量在窗口区域比在非窗口区域中更大。 第二半导体层包括电流限制层。