公开(公告)号：US20240178636A1

公开(公告)日：2024-05-30

申请号：US18319790

申请日：2023-05-18

申请人： HISENSE LASER DISPLAY CO., LTD.

发明人： Xin ZHANG ,  Youliang TIAN ,  Zinan ZHOU

IPC分类号： H01S5/22 ,  H01S5/02253 ,  H01S5/02255 ,  H01S5/40

CPC分类号： H01S5/2202 ,  H01S5/4031 ,  H01S5/02253 ,  H01S5/02255

摘要： A light-emitting device and a laser are provided. The light-emitting device includes a first electrode, a light-emitting layer, an insulating layer and a second electrode which are sequentially arranged in a first direction; the light-emitting layer comprises a light-emitting portion and a non-light-emitting portion, an end of the light-emitting portion in the first direction is in contact with the second electrode through a via hole in the insulating layer, another end of the light-emitting portion in the first direction is in contact with the first electrode, and the non-light-emitting portion is covered by the insulating layer; and a surface of the non-light-emitting portion covered by the insulating layer is provided with a groove, the groove extends along a boundary between the light-emitting portion and the non-light-emitting portion, and the groove is used to block movement of carriers in the light-emitting layer from the light-emitting portion to the non-light-emitting portion.

公开(公告)号：US10063034B2

公开(公告)日：2018-08-28

申请号：US15165004

申请日：2016-05-26

申请人： NGK INSULATORS, LTD.

发明人： Jungo Kondo ,  Shoichiro Yamaguchi ,  Takashi Yoshino ,  Yukihisa Takeuchi

IPC分类号： H01S5/14 ,  H01S5/10 ,  H01S5/022 ,  H01S5/22 ,  H01S5/028 ,  G02B6/124

CPC分类号： H01S5/141 ,  G02B6/124 ,  H01S5/02252 ,  H01S5/0287 ,  H01S5/1021 ,  H01S5/1039 ,  H01S5/2202 ,  H01S2301/163

摘要： An external resonator type light emitting system includes a light source oscillating a semiconductor laser light by itself and a grating device providing an external resonator with the light source. The system performs oscillation in single mode. The light source includes an active layer oscillating the semiconductor laser light. The grating device includes an optical waveguide having an incident face to which the semiconductor laser is incident and an emitting face of emitting an emitting light of a desired wavelength, a Bragg grating formed in the optical waveguide, and a propagating portion provided between the incident face and the Bragg grating. Formulas (1) to (5) are satisfied.

公开(公告)号：US09306373B2

公开(公告)日：2016-04-05

申请号：US13768404

申请日：2013-02-15

申请人： Avago Technologies General IP (Singapore) Pte. Ltd.

发明人： Ruiyu Fang ,  Giammarco Rossi ,  Roberto Paoletti

IPC分类号： H01S5/22 ,  H01S5/02 ,  H01S5/10 ,  H01S5/343

CPC分类号： H01S5/2202 ,  H01S5/0201 ,  H01S5/1014 ,  H01S5/1082 ,  H01S5/343

摘要： An edge-emitting etched-facet optical semiconductor structure includes a substrate, an active multiple quantum well (MQW) region formed on the substrate, a ridge waveguide formed over the MQW region extending in substantially a longitudinal direction between a waveguide first etched end facet disposed in a first window and a waveguide second etched end facet disposed in a second window, and first and second trenches having non-uniform widths extending in substantially the longitudinal direction between the first and second windows.

摘要翻译： 边缘发射蚀刻小面光学半导体结构包括衬底，形成在衬底上的有源多量子阱（MQW）区域，形成在MQW区域上的脊波导，该脊波导基本上在纵向方向上延伸，在波导第一蚀刻端面之间布置 在第一窗口和设置在第二窗口中的波导第二蚀刻端面，并且第一和第二沟槽具有在第一和第二窗口之间的大体上沿纵向延伸的不均匀宽度。

公开(公告)号：US08927306B2

公开(公告)日：2015-01-06

申请号：US13781129

申请日：2013-02-28

申请人： Avago Technologies General IP (Singapore) Pte. Ltd.

发明人： Ruiyu Fang ,  Giuliana Morello ,  Giammarco Rossi ,  Roberto Paoletti ,  Alessandro Stano ,  Giancarlo Meneghini

IPC分类号： H01L21/00 ,  H01L33/06

CPC分类号： H01L33/06 ,  H01S5/0201 ,  H01S5/0282 ,  H01S5/1082 ,  H01S5/2202 ,  H01S5/343 ,  H01S2301/176

摘要： An edge-emitting etched-facet optical semiconductor structure has a substrate, an active multiple quantum well (MQW) region formed on the substrate, and a ridge waveguide formed over the MQW region extending in substantially a longitudinal direction between a waveguide first etched end facet and a waveguide second etched end facet. A mask layer used to form windows in which the etched end facets are disposed consists of a single dielectric material disposed directly on the ridge waveguide. An optical coating consisting of no more than one layer of the same dielectric material of which the second mask is made is disposed directly on the second mask and disposed directly on the windows to coat the etched end facets.

摘要翻译： 边缘发射蚀刻小面光学半导体结构具有衬底，形成在衬底上的有源多量子阱（MQW）区域和形成在MQW区域上的脊形波导，该脊波导基本沿纵向方向延伸到波导第一蚀刻端面 和波导第二蚀刻端面。 用于形成蚀刻的端面的窗口的掩模层由直接设置在脊波导上的单个电介质材料组成。 由不超过一层的相同电介质材料构成的第二掩模组成的光学涂层直接设置在第二掩模上并且直接设置在窗户上以涂覆蚀刻的端面。

公开(公告)号：US20120263203A1

公开(公告)日：2012-10-18

申请号：US13421895

申请日：2012-03-16

申请人： Naoki KOBAYASHI

发明人： Naoki KOBAYASHI

IPC分类号： H01S5/02 ,  H01L33/48

CPC分类号： H01S5/02272 ,  H01S5/0224 ,  H01S5/02469 ,  H01S5/2202

摘要： To reduce the stress imposed on an LD chip and to sufficiently secure the heat radiation property of the LD chip. An LD module includes a PLC board, an LD chip, and a solder bump. The PLC board includes a PLC electrode. The LD chip includes an LD electrode, and a stripe-form active layer formed in an inner part adjacent to the LD electrode. The solder bump bonds the PLC electrode and the LD electrode by being disposed only in a part right under the active layer.

摘要翻译： 为了减轻施加在LD芯片上的应力并充分确保LD芯片的散热性能。 LD模块包括PLC板，LD芯片和焊料凸块。 PLC板包括PLC电极。 LD芯片包括LD电极和形成在与LD电极相邻的内部部分中的条形有源层。 焊料凸块通过仅在活性层正下方的部分设置来连接PLC电极和LD电极。

公开(公告)号：US20120093190A1

公开(公告)日：2012-04-19

申请号：US13267080

申请日：2011-10-06

申请人： Yutaka ONISHI

发明人： Yutaka ONISHI

IPC分类号： H01S5/026 ,  H01L33/58

CPC分类号： H01S5/12 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01S5/06226 ,  H01S5/2202 ,  H01S2301/176 ,  H01L2924/00014

摘要： A semiconductor laser device includes a first semiconductor stack portion that includes a grating layer and an active layer provided on the grating layer. The grating layer has a first region and second region; a diffraction grating provided in the first region; a semiconductor ridge structure portion provided on the first semiconductor stack portion and extending in a first direction; and a pair of first trenches provided along both side faces of the semiconductor ridge structure portion with the first region of the grating layer being located between the trenches. The first trenches penetrate through the grating layer. The first region of the grating layer has an end extending in a second direction intersecting with the first direction. The end of the first region of the grating layer reaches a trench.

摘要翻译： 半导体激光器件包括第一半导体叠层部分，其包括光栅层和设置在光栅层上的有源层。 光栅层具有第一区域和第二区域; 设置在所述第一区域中的衍射光栅; 设置在所述第一半导体堆叠部分上并沿第一方向延伸的半导体脊结构部分; 以及沿着半导体脊结构部分的两个侧面设置的一对第一沟槽，其中光栅层的第一区域位于沟槽之间。 第一沟槽穿过光栅层。 光栅层的第一区域具有沿与第一方向交叉的第二方向延伸的端部。 光栅层的第一区域的末端到达沟槽。

公开(公告)号：US08073029B2

公开(公告)日：2011-12-06

申请号：US12320438

申请日：2009-01-26

申请人： Jun-ichi Hashimoto

发明人： Jun-ichi Hashimoto

IPC分类号： H01S3/00 ,  H01S3/04 ,  H01S5/00

CPC分类号： H01S5/2202 ,  H01S5/2004 ,  H01S5/2027 ,  H01S5/2231 ,  H01S2302/00

摘要： To provide a semiconductor optical device which can restrain laser characteristics from being deteriorated by excitation in a substrate mode and can reduce the number of manufacturing steps. A semiconductor optical device comprises a first DBR layer, provided on a semiconductor substrate, having first and second semiconductor layers stacked alternately, a first cladding layer, an active layer, and a second cladding layer. The semiconductor substrate has a bandgap higher than that of the active layer. The first DBR layer is transparent to light having an emission wavelength, while the first and second semiconductor layers have respective refractive indices different from each other. Since the first DBR layer is thus provided between the semiconductor substrate and first cladding layer, the guided light reaching the lower end of the first cladding layer, if any, is reflected by the first DBR layer, whereby light can be restrained from leaking to the semiconductor substrate. This can avoid the substrate-mode excitation, thereby suppressing its resulting laser characteristic deteriorations such as destabilization of oscillation wavelengths.

摘要翻译： 为了提供能够抑制激光特性在基板模式中被激励而劣化的半导体光学器件，并且可以减少制造步骤的数量。 半导体光学器件包括设置在半导体衬底上的第一DBR层，其具有交替堆叠的第一和第二半导体层，第一覆层，有源层和第二覆层。 半导体衬底的带隙高于有源层的带隙。 第一DBR层对具有发射波长的光是透明的，而第一和第二半导体层具有彼此不同的折射率。 由于第一DBR层设置在半导体衬底和第一覆层之间，所以到达第一覆层的下端的导光（如果有的话）被第一DBR层反射，由此可以抑制光泄漏到 半导体衬底。 这可以避免衬底模式激励，从而抑制其产生的激光特性恶化，例如振荡波长的不稳定性。

公开(公告)号：US20100195691A1

公开(公告)日：2010-08-05

申请号：US12696322

申请日：2010-01-29

申请人： Naoto Jikutani ,  Takashi Takahashi ,  Shunichi Sato

发明人： Naoto Jikutani ,  Takashi Takahashi ,  Shunichi Sato

IPC分类号： H01S5/187

CPC分类号： H01S5/2202 ,  B82Y20/00 ,  H01S5/22 ,  H01S5/2206 ,  H01S5/2209 ,  H01S5/221 ,  H01S5/2231 ,  H01S5/3201 ,  H01S5/3434

摘要： A laser diode includes a substrate having a lattice constant of GaAs or between GaAs and GaP, a first cladding layer of AlGaInP formed on the substrate, an active layer of GaInAsP formed on the first cladding layer, an etching stopper layer of GaInP formed on the active layer, a pair of current-blocking regions of AlGaInP formed on the etching stopper layer so as to define a strip region therebetween, an optical waveguide layer of AlGaInP formed on the pair of current-blocking regions so as to cover the etching stopper layer in the stripe region, and a second cladding layer of AlGaInP formed on the optical waveguide layer, wherein the current-blocking regions having an Al content substantially identical with an Al content of the second cladding layer.

摘要翻译： 激光二极管包括具有GaAs晶格常数或GaAs和GaP之间的基板，在基板上形成的AlGaInP的第一包层，形成在第一包层上的GaInAsP的有源层，形成在第一包层上的GaInP的蚀刻停止层 有源层，在蚀刻阻挡层上形成一对AlGaInP的电流阻挡区域，以便限定它们之间的条带区域，形成在一对电流阻挡区域上以覆盖蚀刻阻挡层的AlGaInP光波导层 以及形成在光波导层上的AlGaInP的第二包覆层，其中，所述电流阻挡区域的Al含量基本上与第二包层的Al含量相同。

公开(公告)号：US20090257467A1

公开(公告)日：2009-10-15

申请号：US12084937

申请日：2006-12-05

申请人： Koichi Naniwae ,  Ichiro Masumoto

发明人： Koichi Naniwae ,  Ichiro Masumoto

IPC分类号： H01S5/20 ,  H01L21/00

CPC分类号： H01S5/32341 ,  H01S5/2202 ,  H01S5/2231

摘要： A laser diode 300 includes a p-type GaN guide layer 107, a current confinement layer 314 provided on the p-type GaN guide layer 107 and having an opening 314A formed therein, and a p-type cladding layer 108 provided on the current confinement layer 314 and plugging the opening 314A formed in the current confinement layer 314. An interface between the p-type cladding layer 108 and the p-type GaN guide layer 107 is located in a bottom of the opening 314A. The current confinement layer 314 is a layer of a group III nitride semiconductor, and a width dimension of the opening 314A is minimized in the upper side of the opening 314A.

摘要翻译： 激光二极管300包括p型GaN引导层107，设置在p型GaN引导层107上并具有形成在其中的开口314A的电流限制层314和设置在电流限制上的p型包覆层108 层314并堵塞形成在电流限制层314中的开口314A。p型覆层108和p型GaN引导层107之间的界面位于开口314A的底部。 电流限制层314是III族氮化物半导体的层，并且开口314A的宽度尺寸在开口314A的上侧被最小化。

公开(公告)号：US07585688B2

公开(公告)日：2009-09-08

申请号：US12039267

申请日：2008-02-28

申请人： Takafumi Oka ,  Shinji Abe

发明人： Takafumi Oka ,  Shinji Abe

IPC分类号： H01L21/00

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/2086 ,  H01S5/2202 ,  H01S5/2214 ,  H01S5/34333

摘要： A method for manufacturing a semiconductor optical device includes: forming a first resist pattern on a top surface of a laminated semiconductor structure; forming channels and a waveguide ridge by dry etching using the first resist pattern as a mask; forming an SiO2 film on the waveguide ridge and the channels, leaving the first resist pattern on a top surface of the waveguide ridge; forming a second resist pattern covering the SiO2 film on the channels, and exposing the top surface of the SiO2 film on top of the waveguide ridge; removing the SiO2 film by dry etching using the second resist pattern as a mask; removing the first and second resist patterns by a wet method; and forming a p-side electrode.

摘要翻译： 一种制造半导体光学器件的方法包括：在层叠半导体结构的顶表面上形成第一抗蚀剂图案; 通过使用第一抗蚀剂图案作为掩模的干蚀刻形成通道和波导脊; 在波导脊和通道上形成SiO 2膜，将第一抗蚀剂图案留在波导脊的顶表面上; 在所述通道上形成覆盖所述SiO 2膜的第二抗蚀剂图案，并且将所述SiO 2膜的顶表面暴露在所述波导脊的顶部; 通过使用第二抗蚀剂图案作为掩模的干蚀刻去除SiO 2膜; 通过湿法去除第一和第二抗蚀剂图案; 并形成p侧电极。