公开(公告)号：US09123645B2

公开(公告)日：2015-09-01

申请号：US14086545

申请日：2013-11-21

Applicant: FREESCALE SEMICONDUCTOR, INC.

Inventor： Bruce M. Green ,  Haldane S. Henry ,  Chun-Li Liu ,  Karen E. Moore ,  Matthias Passlack

IPC: H01L21/28 ,  H01L21/285 ,  H01L29/423 ,  H01L29/47 ,  H01L29/778 ,  H01L29/06 ,  H01L29/20 ,  H01L29/43

CPC classification number: H01L21/28581 ,  H01L21/28587 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/432 ,  H01L29/475 ,  H01L29/7787

Abstract: Embodiments include methods of making semiconductor devices with low leakage Schottky contacts. An embodiment includes providing a partially completed semiconductor device including a substrate, a semiconductor on the substrate, and a passivation layer on the semiconductor, and using a first mask, locally etching the passivation layer to expose a portion of the semiconductor. Without removing the first mask, a Schottky contact is formed of a first material on the exposed portion of the semiconductor, and the mask is removed. Using a further mask, a step-gate conductor of a second material electrically coupled to the Schottky contact is formed overlying parts of the passivation layer adjacent to the Schottky contact. By minimizing the process steps between opening the Schottky contact window in the passivation layer and forming the Schottky contact material in this window, the gate leakage of a resulting field effect device having a Schottky gate may be substantially reduced.

Abstract translation: 实施例包括制造具有低泄漏肖特基接触的半导体器件的方法。 实施例包括提供部分完成的半导体器件，其包括衬底，衬底上的半导体和半导体上的钝化层，并且使用第一掩模，局部蚀刻钝化层以暴露半导体的一部分。 在不去除第一掩模的情况下，在半导体的暴露部分上由第一材料形成肖特基接触，并且去除掩模。 使用另外的掩模，电耦合到肖特基接触的第二材料的阶梯栅导体形成在与肖特基接触相邻的钝化层的部分上。 通过最小化打开钝化层中的肖特基接触窗口并在该窗口中形成肖特基接触材料之间的工艺步骤，可以显着减少所得到的具有肖特基栅极的场效应器件的栅极泄漏。